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UMT1N

更新时间: 2024-02-02 03:22:06
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 81K
描述
General Purpose Transistor (Isolated Dual Transistors)

UMT1N 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.56最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):120最高工作温度:150 °C
极性/信道类型:PNP子类别:Other Transistors
表面贴装:YESBase Number Matches:1

UMT1N 数据手册

 浏览型号UMT1N的Datasheet PDF文件第2页浏览型号UMT1N的Datasheet PDF文件第3页浏览型号UMT1N的Datasheet PDF文件第4页 
EMT1 / UMT1N / IMT1A  
Transistors  
General Purpose Transistor  
(Isolated Dual Transistors)  
EMT1 / UMT1N / IMT1A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two 2SA1037AK chips in a EMT or UMT or SMT  
package.  
EMT1  
(
(
(
)
)
)
( )  
4
( )  
5
( )  
6
3
2
1
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
3) Transistor elements are independent,  
eliminating interference.  
1.2  
1.6  
Each lead has same dimensions  
ROHM  
:
EMT6 Abbreviated symbol : T1  
UMT1N  
zStructure  
Epitaxial planar type  
PNP silicon transistor  
1.25  
2.1  
0.1Min.  
zEquivalent circuit  
Each lead has same dimensions  
EMT1 / UMT1N  
IMT1A  
ROHM  
EIAJ  
:
UMT6  
:
SC-88  
Abbreviated symbol : T1  
(3) (2) (1)  
(4) (5) (6)  
IMT1A  
Tr1  
Tr1  
Tr2  
Tr2  
(3) (2) (1)  
(4) (5) (6)  
1.6  
2.8  
The following characteristics apply to both  
Tr and Tr  
0.3to0.6  
1
2.  
Each lead has same dimensions  
ROHM  
EIAJ  
:
SMT6  
:
SC-74  
Abbreviated symbol : T1  
zAbsolute maximum ratings (Ta = 25°C)  
Limits  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Unit  
V
VCBO  
VCEO  
VEBO  
60  
50  
V
6  
V
I
C
150  
mA  
Collector  
power  
dissipation  
EMT1, UMT1N  
150 (TOTAL)  
300 (TOTAL)  
150  
1
2
P
C
mW  
IMT1A  
Tj  
°C  
°C  
Junction temperature  
Storage temperature  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Rev.A  
1/3  

UMT1N 替代型号

型号 品牌 替代类型 描述 数据表
UMT1N SECOS

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