Datasheet > UMT1N_08

UMT1N_08

更新时间： 2024-02-09 03:00:50

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	101K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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UMT1N_08 数据手册

EMT1 / UMT1N / IMT1A

Transistors

General Purpose Transistor

(Isolated Dual Transistors)

EMT1 / UMT1N / IMT1A

zDimensions (Unit : mm)

zFeatures

1) Two 2SA1037AK chips in a EMT or UMT or SMT

package.

EMT1

(6) (5) (4)

(1) (2) (3)

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent,

eliminating interference.

Each lead has same dimensions

ROHM

EMT6 Abbreviated symbol : T1

UMT1N

zStructure

Epitaxial planar type

PNP silicon transistor

(6) (5) (4)

(1) (2) (3)

zEquivalent circuit

EMT1 / UMT1N

IMT1A

(3) (2) (1)

(4) (5) (6)

Each lead has same dimensions

: UMT6

ROHM

EIAJ

SC-88

Abbreviated symbol : T1

Tr1

Tr2

IMT1A

(3) (2) (1)

(4) (5) (6)

The following characteristics apply to both

Tr¹and Tr2.

(3) (2)

(1)

Each lead has same dimensions

zAbsolute maximum ratings (Ta = 25°C)

ROHM

EIAJ

SMT6

SC-74

Abbreviated symbol : T1

Limits

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Unit

VCBO

VCEO

VEBO

−60

−50

−6

−150

Collector

power

dissipation

EMT1, UMT1N

150 (TOTAL)

300 (TOTAL)

150

∗

IMT1A

°C

Junction temperature

Storage temperature

Tstg

−55 to +150

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

Rev.C

1/3

12 3 4

中文翻译

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UMT1N-TP	MCC	获取价格	Dual Transistors
UMT1N-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGE
UMT1TL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL
UMT1TN	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL