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UG10BCTBHE3/81 PDF预览

UG10BCTBHE3/81

更新时间: 2024-01-16 13:12:56
品牌 Logo 应用领域
威世 - VISHAY 局域网功效二极管
页数 文件大小 规格书
5页 153K
描述
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

UG10BCTBHE3/81 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:55 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.025 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

UG10BCTBHE3/81 数据手册

 浏览型号UG10BCTBHE3/81的Datasheet PDF文件第1页浏览型号UG10BCTBHE3/81的Datasheet PDF文件第3页浏览型号UG10BCTBHE3/81的Datasheet PDF文件第4页浏览型号UG10BCTBHE3/81的Datasheet PDF文件第5页 
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
IF = 10 A  
IF = 5 A  
IF = 5 A  
TJ = 25 °C  
TJ = 25 °C  
TJ = 150 °C  
1.25  
1.10  
0.895  
Maximum instantaneous forward voltage  
per diode (1)  
VF  
V
Maximum reverse current per diode at  
working peak reverse voltage  
TJ = 25 °C  
TJ = 100 °C  
10  
200  
IR  
µA  
Maximum reverse recovery time per diode  
Maximum reverse recovery time per diode  
Maximum stored charge per diode  
IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
trr  
trr  
25  
20  
9
ns  
ns  
IF = 2 A, dI/dt = 20 A/µs, VR = 30 V, Irr = 0.1 IRM  
Qrr  
nC  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
UG10  
BYQ28E  
50  
UGF10  
BYQ28EF  
55  
UGB10  
BYQ28EB  
50  
PARAMETER  
SYMBOL  
UNIT  
Typical thermal resistance per diode, junction to ambient  
Typical thermal resistance per diode, junction to case  
RθJA  
RθJC  
°C/W  
4.5  
6.7  
4.8  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
BYQ28E-200-E3/45  
1.80  
1.95  
1.77  
1.77  
1.80  
1.95  
1.77  
1.77  
45  
45  
45  
81  
45  
45  
45  
81  
BYQ28EF-200-E3/45  
BYQ28EB-200-E3/45  
BYQ28EB-200-E3/81  
BYQ28E-200HE3/45 (1)  
BYQ28EF-200HE3/45 (1)  
BYQ28EB-200HE3/45 (1)  
BYQ28EB-200HE3/81 (1)  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
50/tube  
Tape reel  
Tube  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
Tape reel  
Note:  
(1) Automotive grade AEC Q101 qualified  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88549  
Revision: 07-Jan-08  

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