Datasheet > UF9640L-TF3-T

UF9640L-TF3-T

更新时间： 2022-02-26 10:02:09

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描述
P-CHANNEL POWER MOSFET

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UF9640L-TF3-T 数据手册

UF9640

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

V_(BR)DSS

∆V_(BR)DSS/∆T_J

I_DSS

V_GS=0V, I_D=-250µA

I_D=-1mA,

Referenced to 25°C

V_DS=-200V, V_GS=0V

V_GS=+20V

-200

Breakdown Voltage Temp. Coefficient

Drain-Source Leakage Current

-0.20

V/°C

-100

µA

Forward

Reverse

+100 nA

Gate-Source Leakage Current

I_GSS

V_GS=-20V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

g_FS

V_DS=V_GS, I_D=-250µA

-2.0

4.1

-4.0

Ω

Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC PARAMETERS

Input Capacitance

V_GS=-10V, I_D=-6.6A (Note 4)

V_DS=-50V, I_D=-6.6A (Note 4)

0.50

C_ISS

C_OSS

C_RSS

L_S

1200

370

Output Capacitance

V_DS=-25V,V_GS=0V,f=1.0MHz

Reverse Transfer Capacitance

Internal Source Inductance

SWITCHING PARAMETERS

Total Gate Charge

7.5

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

7.1

V_DS=-160V, V_GS=-10V,

Gate-Source Charge

I_D=-11A (Note4)

Gate-Drain Charge

Turn-ON Delay Time

Turn-ON Rise Time

V_DD=-100V,I_D=-11A,R_G=9.1Ω,

R_D=8.6Ω (Note 4)

Turn-OFF Delay Time

Turn-OFF Fall Time

t_D(OFF)

t_F

Between lead, 6mm (0.25in.)

from package and center of

die contact

Internal Drain Inductance

L_D

4.5

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

-11

-44

-5.0

300

3.6

I_SM

V_SD

t_RR

I_S=-11A, V_GS=0V, T_J=25°C

I_F=-11A, T_J=25°C

dI/dt=100A/μs (Note 4)

250

2.9

μC

Q_RR

Intrinsic turn-on time is neglegibal (turn-on is dominated

by L_S+L_D)

Forward Turn-On Time

t_ON

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. V_DD=-50V, Starting T_J=25°C, L=8.7mH, R_G=25Ω, I_AS=-11A

3. I_SD≤-11A, di/dt ≤150A/μs, V_DD≤BV_DSS, Starting T_J=150°C

4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

UNISONIC TECHNOLOGIES CO., LTD

5 of 8

QW-R502-484.E

www.unisonic.com.tw

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