Datasheet > UF5408GP-B

UF5408GP-B

更新时间： 2024-01-10 16:13:16

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	128K
描述
Rectifier Diode,

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技术参数
数据手册

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UF5408GP-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

UF5408GP-B 数据手册

UF5400GP thru UF5408GP

M C C

Figure 4

Typical Reverse Characteristics

Micro Commercial Components

100

Figure 5

Peak Forward Surge Current

T_J=150°C

150

125

100

Amps

T_J=100°C

mAmps

100

10 20

T_J=25°C

Cycles

Peak Forward Surge Current - Amperesversus

Number Of Cycles At 60Hz - Cycles

.06

.04

.02

.01

140

100

120

Volts

Instantaneous Reverse Leakage Current - MicroAmperesversus

Percent Of Rated Peak Reverse Voltage - Volts

Figure 6

Reverse Recovery Time Characteristic And Test Circuit Diagram

50W

10W

t_rr

+0.5A

Pulse

Generator

Note 2

-0.25

25Vdc

Oscilloscope

Note 1

-1.0

1cm

Notes:

1. Rise Time = 7ns max.

Set Time Base for 20/100ns/cm

Input impedance = 1 megohm, 22pF

2. Rise Time = 10ns max.

Source impedance = 50 ohms

3. Resistors are non-inductive

www.mccsemi.com

Revision: 4

2003/11/13

1 23

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