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UF1B PDF预览

UF1B

更新时间: 2024-09-29 12:57:03
品牌 Logo 应用领域
森美特 - SUNMATE 二极管光电二极管
页数 文件大小 规格书
2页 317K
描述
1.0A patch fast recovery diode 100V SMA series

UF1B 数据手册

 浏览型号UF1B的Datasheet PDF文件第2页 
UF1A - UF1M  
SURFACE MOUNT ULTAFAST RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 1.0 A  
Features  
Glass Passivated Die Construction  
!
! Diffused Junction  
Ultra-Fast Recovery Time for High Efficiency  
Low Forward Voltage Drop, High Current  
Capability, and Low Power Loss  
!
!
Ideally Suited for Automated Assembly  
Plastic Material: UL Flammability  
!
!
B
SMA(DO-214AC)  
Classification Rating 94V-0  
Dim  
MinMax  
Mechanical Data  
A
B
C
D
E
G
H
J
2.29  
4.00  
1.27  
0.15  
4.80  
0.10  
0.76  
2.01  
2.92  
4.60  
1.63  
0.31  
5.59  
0.20  
1.52  
2.62  
A
J
C
Case: SMA(DO-214AC)Molded Plastic  
Terminals: Solder Plated Terminal - Solderable  
per MIL-STD-202, Method 208  
!
!
D
! Polarity: Cathode Band or Cathode Notch  
!
!
Marking: Type Number  
Weight: 0.064 grams (approx.)  
Mounting Position: Any  
G
H
!
E
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics  
TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Symbol  
Unit  
UF1A  
UF1B  
UF1D  
UF1G  
UF1J  
UF1K  
UF1M  
Characteristic  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
50  
100  
200  
400  
600  
800  
1000  
700  
V
V
Maximum RMS voltage  
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
1000  
100  
VDC  
I(AV)  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TA=65 C (NOTE 1)  
V
A
Peak forward surge current  
IFSM  
25.0  
1.4  
8.3ms single half sine-wave superimposed on  
A
V
rated load (JEDEC Method)  
TL=25 C  
VF  
IR  
Maximum instantaneous forward voltage at 1.0A  
1.0  
50  
1.7  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100.0  
µ
A
TA=125 C  
trr  
ns  
Maximum reverse recovery time (NOTE 2)  
Typical thermal resistance (NOTE 4)  
75  
K/W  
180  
RθJA  
Operating junction and storage temperature range  
TJ,TSTG  
-50 to +150  
C
Note:  
1.Averaged over any 20ms period.  
2.Measured with IF=0.5A, IR=1A, Irr=0.25A.  
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
4.Thermal resistance junction to ambient, 6.0 mm2 coppeer pads to each terminal.  
1 of 2  
www.sunmate.tw  

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