UF1008FCT-LF

更新时间： 2025-11-09 13:15:07

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	50K
描述
Rectifier Diode, 1 Phase, 2 Element, 5A, 800V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220, 3 PIN

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UF1008FCT-LF 数据手册

WTE

POWER SEMICONDUCTORS

UF1000 – UF1008

10A GLASS PASSIVATED ULTRAFAST RECTIFIER

Features

Glass Passivated Die Construction

Ultra-Fast Switching

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-220A

Dim

Min

13.90

9.80

2.54

3.56

12.70

0.51

3.55 Ø

5.75

4.16

2.03

0.30

1.14

4.83

Max

15.90

10.70

3.43

PIN1

4.56

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

14.73

0.96

4.09 Ø

6.85

Mechanical Data

Case: TO-220A, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

5.00

2.92

0.65

1.40

5.33

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 +

PIN 3 -

Case

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

1000

1001

1002

1003

1004

1006

1008

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

400

280

600

420

800

RMS Reverse Voltage

V^R(RMS)

I^O

210

560

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 10A

V^FM

I^RM

1.0

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

500

µA

Reverse Recovery Time (Note 1)

t^rr

C^j

100

°C

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

UF1000 – UF1008

1 of 4

12 3 4

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