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U635H256SC25 PDF预览

U635H256SC25

更新时间： 2024-02-24 04:58:37
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 208K
描述
32KX8 NON-VOLATILE SRAM, 25ns, PDSO28, 0.330 INCH, SOP1-28

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U635H256SC25 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SOP, SOP28,.5Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.41
风险等级：5.11最长访问时间：25 ns
备用内存宽度：1JESD-30 代码：R-PDSO-G28
JESD-609代码：e0长度：18.1 mm
内存密度：262144 bit内存集成电路类型：NON-VOLATILE SRAM
内存宽度：8功能数量：1
端子数量：28字数：32768 words
字数代码：32000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：32KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP28,.5
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：5 V认证状态：Not Qualified
座面最大高度：2.54 mm最大待机电流：0.04 A
子类别：SRAMs最大压摆率：0.095 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn85Pb15)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：8.75 mm
Base Number Matches：1

U635H256SC25 数据手册

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U635H256  
PowerStore 32K x 8 nvSRAM  
Features  
Description  
The U635H256 has two separate  
modes of operation: SRAM mode  
and nonvolatile mode. In SRAM  
mode, the memory operates as an  
ordinary static RAM. In nonvolatile  
operation, data is transferred in  
parallel from SRAM to EEPROM or  
from EEPROM to SRAM. In this  
mode SRAM functions are disab-  
led.  
S High-performance CMOS non-  
volatile static RAM 32768 x 8 bits  
S 25, 35 and 45 ns Access Times  
S 10, 15 and 20 ns Output Enable  
Access Times  
grity.  
STORE cycles also may be initia-  
ted under user control via a soft-  
ware sequence.  
Once a STORE cycle is initiated,  
further input or output are disabled  
until the cycle is completed.  
Because a sequence of addresses  
is used for STORE initiation, it is  
important that no other read or  
write accesses intervene in the  
sequence or the sequence will be  
aborted.  
S ICC = 15 mA typ. at 200 ns Cycle  
Time  
S Automatic STORE to EEPROM  
on Power Down using system  
capacitance  
The U635H256 is a fast static RAM  
(25, 35, 45 ns), with a nonvolatile  
S Software initiated STORE  
S Automatic STORE Timing  
S 106 STORE cycles to EEPROM  
S 100 years data retention in  
EEPROM  
electrically  
erasable  
PROM  
(EEPROM) element incorporated  
in each static memory cell. The  
SRAM can be read and written an  
unlimited number of times, while  
independent nonvolatile data resi-  
des in EEPROM. Data transfers  
from the SRAM to the EEPROM  
(the STORE operation) take place  
automatically upon power down  
using charge stored in system  
capacitance. Transfers from the  
EEPROM to the SRAM (the  
RECALL operation) take place  
automatically on power up. The  
U635H256 combines the high per-  
RECALL cycles may also be initia-  
ted by a software sequence.  
Internally, RECALL is a two step  
procedure. First, the SRAM data is  
cleared and second, the nonvola-  
tile information is transferred into  
the SRAM cells.  
S Automatic RECALL on Power Up  
S Software RECALL Initiation  
S Unlimited RECALL cycles from  
EEPROM  
S Single 5 V ± 10 % Operation  
S Operating temperature range:  
0 to 70 °C  
The RECALL operation in no way  
alters the data in the EEPROM  
cells. The nonvolatile data can be  
recalled an unlimited number of  
times.  
The U635H256 is pin compatible  
with standard SRAMs.  
-40 to 85 °C  
S QS 9000 Quality Standard  
S ESD protection > 2000 V  
(MIL STD 883C M3015.7-HBM)  
S RoHS compliance and Pb- free  
S Packages: PDIP28 (300 mil)  
PDIP28 (600 mil)  
formance and ease of use of a fast  
SOP28 (330 mil)  
SRAM with nonvolatile data inte-  
Pin Description  
Pin Configuration  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
1
2
3
4
5
6
7
8
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
W
A13  
A8  
A9  
A11  
G
Signal Name Signal Description  
A0 - A14  
DQ0 - DQ7  
Address Inputs  
Data In/Out  
PDIP  
SOP  
Chip Enable  
E
Output Enable  
Write Enable  
Power Supply Voltage  
Ground  
A10  
E
G
W
VCC  
VSS  
9
A0  
10  
11  
12  
13  
14  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ0  
DQ1  
DQ2  
VSS  
Top View  
1
April 7, 2005  
1234567...14

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U635H256SC25G1 SIMTEK Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDSO28, 0.330 INCH, GREEN, SOP1-28

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U635H256SC25G1 CYPRESS 32KX8 NON-VOLATILE SRAM, 25ns, PDSO28, 0.330 INCH, GREEN, SOP1-28

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U635H256SC35 SIMTEK Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDSO28, 0.330 INCH, SOP1-28

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U635H256SC35G1 SIMTEK Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDSO28, 0.330 INCH, GREEN, SOP1-28

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U635H256SC35G1 CYPRESS 32KX8 NON-VOLATILE SRAM, 35ns, PDSO28, 0.330 INCH, GREEN, SOP1-28

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U635H256SC45 SIMTEK Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO28, 0.330 INCH, SOP1-28

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