Datasheet > U635H16BDC25G1

U635H16BDC25G1

更新时间： 2024-01-25 05:22:12

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
13页	221K
描述
Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24

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U635H16BDC25G1 数据手册

U635H16

Nonvolatile Memory Operations

Mode Selection

A10 - A0

Mode

I/O

Power

Notes

(hex)

Not Selected

Read SRAM

Write SRAM

Output High Z

Output Data

Input Data

Standby

Active

000

555

2AA

7FF

0F0

70F

Read SRAM

Output Data

Output High Z

k, l

Read SRAM

Nonvolatile STORE

000

555

2AA

7FF

0F0

70E

Read SRAM

Output Data

Output High Z

Active

k, l

Read SRAM

Nonvolatile RECALL

k: The six consecutive addresses must be in order listed (000, 555, 2AA, 7FF, 0F0, 70F) for a Store cycle or (000, 555, 2AA, 7FF,0F0, 70E) for

a RECALL cycle. W must be high during all six consecutive cycles.

See STORE cycle and RECALL cycle tables and diagrams for further details.

The following six-address sequence is used for testing purposes and should not be used: 000, 555, 2AA, 7FF, 0F0, 39C.

l: Activation of nonvolatile cycles does not depend on the state of G.

m: I/O state assumes that G ≤ V_IL.

Symbol

PowerStore

No.

Conditions

Min.

Max.

Unit

Power Up RECALL

Alt.

IEC

24 Power Up RECALL Duration^{n, e}

t_RESTORE

650

µs

the power supply vol-

tage must stay above

3.6 V at least

25 STORE Cycle Duration^f

t_PDSTORE

10 ms after the start

of the STORE opera-

tion

26 time allowed to Complete SRAM Cycle^{f, e}t_DELAY

µs

Low Voltage Trigger Level

V_SWITCH

4.0

4.5

n: t_RESTOREstarts from the time V_CCrises above V_SWITCH

April 20, 2004

1...4 5 678 9 10...13

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