Datasheet > U633H04BD1K25

U633H04BD1K25

更新时间： 2023-02-26 14:11:33

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器光电二极管
页数	文件大小	规格书
13页	202K
描述
512X8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

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U633H04BD1K25 数据手册

Preliminary

U633H04

NONVOLATILE MEMORY OPERATIONS

MODE SELECTION

A8 - A0

(hex)

HSB

Mode

I/O

Power

Notes

Not Selected

Read SRAM

Write SRAM

STORE/Inhibit

Output High Z

Output Data

Input Data

Standby

Active

Output High Z

_CC2/Standby

k: reserved for future development

l: I/O state assumes that G ≤ V_IL. Activation of nonvolatile cycles does not depend on the state of G.

m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE (if any)

completes, the part will go into standby mode inhibiting all operation until HSB rises.

Symbol

PowerStore Power Up RECALL/

No.

Conditions

Min. Max. Unit

Hardware Controlled STORE

Alt.

IEC

24 Power Up RECALL Duration^{n, e}

25 STORE Cycle Duration

26 HSB Low to Inhibit On^e

27 HSB High to Inhibit Off^e

28 External STORE Pulse Width^e

HSB Output Low Current^{e, o}

HSB Output High Current^{e, o}

Low Voltage Trigger Level

t_RESTORE

t_HLQX

650

µs

µA

t_d(H)S

t_dis(H)S

t_en(H)S

t_w(H)S

V_CC4.5 V

t_HLQZ

t_HHQX

700

t_HLHX

250

I_HSBOL

I_HSBOH

V_SWITCH

HSB = V_OL

HSB = V_IL

4.0

4.5

n: An automatic RECALL also takes place at power up, starting when V_CCexceeds V_SWITCHand takes t_RESTORE

_SWITCHonce it has been exceeded for the RECALL to function properly.

. V_CCmust not drop below

o: HSB is an I/O that has a week internal pullup; it is basically an open drain output. It is meant to allow up to 32 U633H04 to be ganged

together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other U633H04 HSB pins.

December 12, 1997

1...4 5 678 9 10...13

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