Datasheet > U630H16BDC35

U630H16BDC35

更新时间： 2023-01-02 14:24:52

品牌	Logo	应用领域
SIMTEK		静态存储器光电二极管
页数	文件大小	规格书
14页	225K
描述
Non-Volatile SRAM, 2KX8, 35ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

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U630H16BDC35 数据手册

U630H16

Symbol

Conditions

Min.

Max.

Unit

DC Characteristics

V_CC

I_OH

I_OL

= 4.5 V

=-4 mA

= 8 mA

Output High Voltage

Output Low Voltage

V_OH

V_OL

2.4

0.4

-4

V_CC

V_OH

V_OL

= 4.5 V

= 2.4 V

= 0.4 V

Output High Current

Output Low Current

I_OH

I_OL

Input Leakage Current

V_CC

= 5.5 V

High

Low

I_IH

I_IL

V_IH

V_IL

= 5.5 V

µA

0 V

-1

Output Leakage Current

V_CC

= 5.5 V

High at Three-State- Output

Low at Three-State- Output

I_OHZ

I_OLZ

V_OH

V_OL

= 5.5 V

µA

0 V

SRAM Memory Operations

Symbol

Switching Characteristics

No.

Unit

Read Cycle

Alt.

IEC

Min. Max. Min. Max. Min. Max.

Read Cycle Time^f

t_AVAV

t_AVQV

t_ELQV

t_GLQV

t_EHQZ

t_GHQZ

t_ELQX

t_GLQX

t_AXQX

t_ELICCH

t_EHICCL

t_cR

t_a(A)

t_a(E)

t_a(G)

t_dis(E)

t_dis(G)

t_en(E)

t_en(G)

t_v(A)

Address Access Time to Data Valid^g

Chip Enable Access Time to Data Valid

Output Enable Access Time to Data Valid

E HIGH to Output in High-Z^h

G HIGH to Output in High-Z^h

E LOW to Output in Low-Z

G LOW to Output in Low-Z

Output Hold Time after Addr. Change^g

10 Chip Enable to Power Active^e

11 Chip Disable to Power Standby^{d, e}

t_PU

t_PD

e: Parameter guaranteed but not tested.

f: Device is continuously selected with E and G both LOW.

g: Address valid prior to or coincident with E transition LOW.

h: Measured ± 200 mV from steady state output voltage.

April 20, 2004

1 2 345 6 7...14

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