Datasheet > U630H16D1A35

U630H16D1A35

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
SIMTEK		静态存储器
页数	文件大小	规格书
15页	152K
描述
HardStore 2K x 8 nvSRAM

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

U630H16D1A35 数据手册

Obsolete - Not Recommended for New Designs

U630H16

HardStore 2K x 8 nvSRAM

Features

Description

• High-performance CMOS nonvo- The U630H16 has two separate

further input or output are disabled

until the cycle is completed.

latile static RAM 2048 x 8 bits

• 25, 35 and 45 ns Access Times

• 12, 20 and 25 ns Output Enable

Access Times

modes of operation: SRAM mode

and nonvolatile mode, determined

by the state of the NE pin.

Internally, RECALL is a two step

procedure. First, the SRAM data is

cleared and second, the nonvola-

tile information is transferred into

the SRAM cells.

The RECALL operation in no way

alters the data in the EEPROM

cells. The nonvolatile data can be

recalled an unlimited number of

times.

In SRAM mode, the memory ope-

rates as an ordinary static RAM. In

nonvolatile operation, data is trans-

ferred in parallel from SRAM to

EEPROM or from EEPROM to

SRAM. In this mode SRAM

functions are disabled.

• Hardware STORE Initiation

(STORE Cycle Time < 10 ms)

• Automatic STORE Timing

• 10⁶STORE cycles to EEPROM

• 100 years data retention in

EEPROM

• Automatic RECALL on Power Up The U630H16 is a fast static RAM

• Hardware RECALL Initiation

(RECALL Cycle Time < 20 ms)

• Unlimited RECALL cycles from

EEPROM

(25, 35, 45 ns), with a nonvolatile

electrically erasable PROM

(EEPROM) element incorporated

in each static memory cell. The

SRAM can be read and written an

unlimited number of times, while

independent nonvolatile data resi-

des in EEPROM. Data transfers

from the SRAM to the EEPROM

(the STORE operation), or from the

EEPROM to the SRAM (the

RECALL operation) are initiated

through the state of the NE pin.

The U630H16 combines the high

performance and ease of use of a

fast SRAM with nonvolatile data

integrity.

• Unlimited Read and Write to

SRAM

• Single 5 V ± 10 % Operation

• Operating temperature ranges:

0to70 ×C

-40to85 ×C

-40to125 °C(only 35 ns)

• QS 9000 Quality Standard

• ESD protection > 2000 V

(MIL STD 883C M3015.7-HBM)

• RoHS compliance and Pb- free

• Packages:SOP28 (300 mil),

PDIP28 (300/600 mil)

Once a STORE cycle is initiated,

Pin Configuration

Pin Description

n.c.

VCC

Signal Name Signal Description

n.c.

A0 - A10

Address Inputs

Data In/Out

DQ0 - DQ7

n.c.

Chip Enable

PDIP

SOP

Output Enable

Write Enable

A10

VCC

VSS

Nonvolatile Enable

Power Supply Voltage

Ground

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

Top View

March 31, 2006

Rev 1.0

STK Control #ML0036

12 3 4 5 6 7...15

下载PDF

与U630H16D1A35相关器件

型号	品牌	描述	获取价格	数据表
U630H16D1A35G1	SIMTEK	HardStore 2K x 8 nvSRAM	获取价格
U630H16D1A45	SIMTEK	HardStore 2K x 8 nvSRAM	获取价格
U630H16D1A45G1	SIMTEK	HardStore 2K x 8 nvSRAM	获取价格
U630H16D1C25	SIMTEK	HardStore 2K x 8 nvSRAM	获取价格
U630H16D1C25G1	SIMTEK	HardStore 2K x 8 nvSRAM	获取价格
U630H16D1C25G1	CYPRESS	2KX8 NON-VOLATILE SRAM, 25ns, PDIP28, 0.600 INCH, GREEN, PLASTIC, DIP-28	获取价格