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U3661M PDF预览

U3661M

更新时间: 2024-01-10 14:06:39
品牌 Logo 应用领域
TEMIC 延迟线
页数 文件大小 规格书
9页 139K
描述
Baseband Delay Line

U3661M 技术参数

生命周期:Transferred包装说明:SO-16
Reach Compliance Code:unknown风险等级:5.69
其他特性:OUTPUT TYPE CAN ALSO BE (-R-Y; -B-Y)商用集成电路类型:COLOR SIGNAL DECODER
JESD-30 代码:R-PDSO-G16功能数量:1
端子数量:16最高工作温度:70 °C
最低工作温度:-10 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大压摆率:10 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
表面贴装:YES温度等级:COMMERCIAL
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

U3661M 数据手册

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U3661M  
Baseband Delay Line (64 s)  
Application  
In TV sets, the integrated baseband delay line circuit is suitable for decoders with color-difference signal outputs  
Description  
The integrated delay line circuit U3661M is suitable for A summing circuitry combines the information of  
all chroma decoders with baseband color-difference adjacent TV-lines, thus giving an interpolated sum for the  
outputs. It is suitable for PAL-, SECAM- and PAL-system, storing preceeding lines for the SECAM-  
NTSC-signals as well. The U3661M contains two system and providing a comb-filtered output for  
separate delay lines for processing (R–Y)-output and NTSC-signals. Due to internally-generated timing,  
(B–Y)-output separately. The delay is performed by synchronization is easily done by feeding a line-frequent  
internally switched capacitors. On-chip postfiltering impulse (usually the SC-impulse) to the sync-input of  
avoids the need for external filter components.  
the IC.  
Features  
One line delay time, addition of delayed and  
non-delayed output signals  
Line-locked by the sandcastle pulse  
No crosstalk between SECAM color  
carriers (diaphoty)  
Adjustment-free application, VCO without  
external components  
Comb filtering functions for NTSC  
color-difference signals  
Handles negative or positive color-difference  
input signals  
Clamping of ac-coupled input signals  
Correction of phase errors in the PAL system  
[±(R–Y) and ±(B–Y)]  
V
Ref  
(B–Y)  
(B–Y)  
12  
11  
S+H  
LPF  
14  
Clamping  
+
Line memory  
Shift register  
Line memory  
(R–Y)  
(R–Y)  
S+H  
LPF  
16  
Clamping  
Bias  
+
V
Ref  
3 MHz  
Control  
f
SC  
V
DD2  
V
1
3
DD1  
9
PLL  
SC detector  
Clock generator  
GND1  
GND2  
10  
5
94 8846  
SC pulse  
Figure 1. Block diagram  
TELEFUNKEN Semiconductors  
1 (9)  
Rev. A1, 17-Jul-96  
Preliminary Information  

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