Datasheet > U309

U309

更新时间： 2024-01-30 14:09:48

品牌	Logo	应用领域
CALOGIC		放大器
页数	文件大小	规格书
2页	28K
描述
N-Channel JFET High Frequency Amplifier

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中文翻译

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数据手册

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U309 数据手册

N-Channel JFET

High Frequency Amplifier

CORPORATION

U308 – U310

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise specified)

High Power Gain

Low Noise

Dynamic Range Greater The 100dB

Easily Matched to 75Ω Input

•

Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA

Storage Temperature. . . . . . . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +150^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/^oC

•

PIN CONFIGURATION

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

(TO-52)

ORDERING INFORMATION

Part

Package

Temperature Range

U308-10

Hermetic TO-52

-55^oC to +150^oC

XU308-10 Sorted Chips in Carriers

-55^oC to +150^oC

G, C

5021

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

U308

U309

U310

SYMBOL

PARAMETER

UNITS

TEST CONDITIONS

MIN TYP MAX MIN TYP MAX MIN TYP MAX

_GS= -15V

-150

I_GSS

Gate Reverse Current

V_GS= 0

T_A= 125^oC

BV_GSS

V_GS(off)

I_DSS

Gate-Source Breakdown Voltage

Gate-Source Cutoff Voltage

I_G= -1µA, V_DS= 0

V_DS= 10V, I_D= 1nA

V_DS= 10V, V_GS= 0

I_G= 10mA, V_DS= 0

-25

-1.0

-25

-6.0 -1.0

-25

-4.0 -2.5

-6.0

Saturation Drain Current (Note 1)

Gate-Source Forward Voltage

V_GS(f)

1.0

Common-Gate Forward

Transconductance (Note 1)

g_fg

_DS= 10V,

f = 1kHz

I_D= 10mA

g_ogs

C_gd

C_gs

Common Gate Output Conductance

Drain-Gate Capacitance

250

2.5

5.0

250

2.5

5.0

250

2.5

5.0

µS

V_GS= -10V, f = 1MHz

V_DS= 10V

(Note 2)

Gate-Source Capacitance

√Hz

Equivalent Short Circuit

Input Noise Voltage

V_DS= 10V,

_D= 10mA

f = 100Hz

(Note 2)

e_n

中文翻译

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