SMD Transient Voltage Suppressor
SMD Diodes Specialist
TV15CJ6V8-G Thru. TV15CJ601-G
Breakdown Voltage: 6.8 to 600 Volts
Peak Pulse Power : 1500Watts
RoHS Device
Features
-Glass passivated chip.
SMC/DO-214AB
-1500W peak pulse power capability with a
10/1000μS waveform, repetitive rate
(duty cycle): 0.01%
0.280(7.02)
0.260(6.52)
-Low leakage
-Uni and Bidirectional unit
-Excellent clamping capability.
0.245(6.15)
0.220(5.52)
0.126(3.16)
0.220(2.86)
- Very fast response time
0.320(8.02)
0.305(7.64)
0.012(0.30)
0.006(0.15)
Mechanical Data
0.103(2.59)
0.079(1.98)
-Case: JEDEC DO-214AB molded plastic.
-Epoxy: UL 94V0 rate flame retardant
0.008(0.20)
0.000(0.00)
0.060(1.51)
0.030(0.75)
-Terminals: solderable per MIL-STD-750,
method 2026.
Dimensions in inches and (millimeter)
-Polarity: Color band denotes cathode end
except bipolar.
Maximum Ratings and Electrical Characteristics
Rating at 25 OC ambient temperature unless otherwise specifiec.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
PPPM
Characteristics
Value
1500
Units
Peak power dissipation at 10/1000μS
W
A
waveform(1)
Peak pulse current at 10/1000μS
IPP
See table 1
waveform(1)
Steady state power dissipation at TL=75°C
PD
6.5
W
A
Peak forward surge current, 8.3mS single
half sine-wave superimposed on rated
load, uni-directional only(2)
IFSM
200
Maximum instantaneous forward voltage
at 100A for uni-directional only (3)
VF
3.5/5.0
V
Operation junction temperature range
TJ
-55 to +150
-55 to +150
°C
°C
Storage temperature range
Notes:
TSTG
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25 OC, per Fig. 1
2. Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.
3. VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
Rev. A
Page 1
QW-BTV17