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TV06B510J-G PDF预览

TV06B510J-G

更新时间: 2024-01-31 11:31:58
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
6页 126K
描述
Trans Voltage Suppressor Diode, 51V V(RWM), Unidirectional,

TV06B510J-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
击穿电压标称值:59.7 V最大钳位电压:82.4 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大重复峰值反向电压:51 V
子类别:Transient Suppressors表面贴装:YES
处于峰值回流温度下的最长时间:30Base Number Matches:1

TV06B510J-G 数据手册

 浏览型号TV06B510J-G的Datasheet PDF文件第2页浏览型号TV06B510J-G的Datasheet PDF文件第3页浏览型号TV06B510J-G的Datasheet PDF文件第4页浏览型号TV06B510J-G的Datasheet PDF文件第5页浏览型号TV06B510J-G的Datasheet PDF文件第6页 
SMD Transient Voltage Suppressor  
TV06B5V0-G Thru. TV06B441-G  
Working Peak Reverse voltage: 5.0 to 440Volts  
Power Dissipation: 600 Watts  
RoHS Device  
Features  
SMB/DO-214AA  
-Glass passivated chip.  
-600W peak pulse power capability with a 10/1000μs  
-waveform, repetitive rate (duty cycle): 0.01%.  
-Low leakage.  
-Uni and Bidirectional unit.  
0.155(3.94)  
0.130(3.30)  
0.087(2.20)  
0.077(1.96)  
-Excellent clamping capability.  
-Very fast response time.  
0.191(4.85)  
0.171(4.35)  
-UL recognized file # E349157  
R
0.012(0.30)  
0.006(0.15)  
-Range: TV06B5V0J(B) thru. TV06B400J(B)  
0.096(2.44)  
0.083(2.13)  
Mechanical Data  
-Case: JEDEC DO-214AA, molded plastic.  
0.008(0.20)  
0.001(0.02)  
0.060(1.52)  
0.030(0.75)  
-Epoxy: UL 94V-0 rate flame retardant.  
0.216(5.50)  
0.201(5.10)  
-Terminals: solderable per MIL-STD-750,  
method 2026  
-Polarity: Color band denotes cathode end  
Dimensions in inches and (millimeter)  
except Bipolar.  
-Mounting position: Any.  
-Weight: 0.108 gram (approx.)  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Parameter  
Symbol  
Units  
Peak power dissipation with a 10/1000μs  
waveform (Note 1)  
PPP  
600  
Watts  
Peak pulse current with a 10/1000μs  
IPP  
PD  
See Next Table  
5.0  
A
Watts  
A
waveform (Note 1)  
Power dissipation on infinite heatsink at  
TL=75°C  
Peak forward surge current, 8.3ms single  
half sine-wave unidirectional only (Note 2)  
IFSM  
100  
Maximum instantaneous forward voltage  
at 50 A for unidirectional only (Note 3)  
VF  
3.55.0  
-55 to +150  
V
Operating junction and  
Storage temperature range  
TJ, TSTG  
°C  
Note:  
1. Non-repetitive current pulse per Fig. 5 and derated above TA=25°C per Fig.1  
2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum.  
3. VF<3.5V for devices of VBR <200V and VF <5.0V for devices of VBR >201V  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:G  
QW-BTV02  
Page 1  
Comchip Technology CO., LTD.  

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