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TUSB212RWBT PDF预览

TUSB212RWBT

更新时间: 2024-02-13 14:11:28
品牌 Logo 应用领域
德州仪器 - TI 电信电信集成电路调节器
页数 文件大小 规格书
27页 1455K
描述
具有直流升压功能的 USB 2.0 高速信号调节器 | RWB | 12 | 0 to 70

TUSB212RWBT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:VQCCN,
Reach Compliance Code:compliantFactory Lead Time:6 weeks
风险等级:1.59数据速率:480240 Mbps
JESD-30 代码:S-PQCC-N12JESD-609代码:e4
长度:1.6 mm湿度敏感等级:2
功能数量:1端子数量:12
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:VQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, VERY THIN PROFILE
峰值回流温度(摄氏度):260座面最大高度:0.4 mm
最大压摆率:30 mA标称供电电压:3.3 V
表面贴装:YES电信集成电路类型:TELECOM CIRCUIT
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.4 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.6 mmBase Number Matches:1

TUSB212RWBT 数据手册

 浏览型号TUSB212RWBT的Datasheet PDF文件第1页浏览型号TUSB212RWBT的Datasheet PDF文件第2页浏览型号TUSB212RWBT的Datasheet PDF文件第3页浏览型号TUSB212RWBT的Datasheet PDF文件第5页浏览型号TUSB212RWBT的Datasheet PDF文件第6页浏览型号TUSB212RWBT的Datasheet PDF文件第7页 
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature and voltage range (unless otherwise noted)(1)  
MIN  
MAX  
UNIT  
Supply Voltage  
VCC  
-0.3  
3.8  
V
Range  
Voltage Range  
DxP, DxM, RSTN, EQ, SCL, SDA, DC_BOOST, VREG  
on I/O pins  
-0.3  
-65  
3.8  
V
Tstg  
Storage temperature  
150  
°C  
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human body model (HBM), per  
±2000  
ANSI/ESDA/JEDEC JS-001, all pins(1)  
V(ESD)  
Electrostatic discharge  
V
Charged device model (CDM), per JEDEC  
specification JESD22-C101, all pins(2)  
±500  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature and voltage range (unless otherwise noted)  
MIN  
3
NOM  
MAX  
3.6  
70  
UNIT  
V
VCC  
TA  
Supply Voltage  
3.3  
TUSB212  
TUSB212I  
TUSB212  
TUSB212I  
0
°C  
Ambient temperature  
-40  
0
85  
°C  
85  
°C  
TJ  
Junction temperature  
-40  
105  
°C  
6.4 Thermal Information  
TUSB212  
RWB (VQFN)  
12 PINS  
137.4  
THERMAL METRIC(1)  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
62  
67.2  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
1.9  
ΨJB  
67.3  
RθJC(bot)  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
4
版权 © 2017, Texas Instruments Incorporated  

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