TUSB212
ZHCSGM7A –AUGUST 2017–REVISED SEPTEMBER 2017
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature and voltage range (unless otherwise noted)(1)
MIN
MAX
UNIT
Supply Voltage
VCC
-0.3
3.8
V
Range
Voltage Range
DxP, DxM, RSTN, EQ, SCL, SDA, DC_BOOST, VREG
on I/O pins
-0.3
-65
3.8
V
Tstg
Storage temperature
150
°C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per
±2000
ANSI/ESDA/JEDEC JS-001, all pins(1)
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature and voltage range (unless otherwise noted)
MIN
3
NOM
MAX
3.6
70
UNIT
V
VCC
TA
Supply Voltage
3.3
TUSB212
TUSB212I
TUSB212
TUSB212I
0
°C
Ambient temperature
-40
0
85
°C
85
°C
TJ
Junction temperature
-40
105
°C
6.4 Thermal Information
TUSB212
RWB (VQFN)
12 PINS
137.4
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
62
67.2
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
1.9
ΨJB
67.3
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4
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