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TUSB212QRWBTQ1 PDF预览

TUSB212QRWBTQ1

更新时间: 2023-09-03 20:32:52
品牌 Logo 应用领域
德州仪器 - TI 调节器
页数 文件大小 规格书
27页 1470K
描述
具有直流升压功能和直通封装的汽车类 USB 2.0 高速信号调节器 | RWB | 12 | -40 to 105

TUSB212QRWBTQ1 数据手册

 浏览型号TUSB212QRWBTQ1的Datasheet PDF文件第1页浏览型号TUSB212QRWBTQ1的Datasheet PDF文件第2页浏览型号TUSB212QRWBTQ1的Datasheet PDF文件第3页浏览型号TUSB212QRWBTQ1的Datasheet PDF文件第5页浏览型号TUSB212QRWBTQ1的Datasheet PDF文件第6页浏览型号TUSB212QRWBTQ1的Datasheet PDF文件第7页 
TUSB212-Q1  
ZHCSGN1 AUGUST 2017  
www.ti.com.cn  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
MAX  
UNIT  
Supply Voltage  
VCC  
-0.3  
3.8  
V
Range  
Voltage Range  
DxP, DxM, RSTN, EQ, SCL, SDA, DC_BOOST, VREG  
on I/O pins  
-0.3  
-65  
3.8  
V
Tstg  
Storage temperature  
150  
°C  
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human body model (HBM), per  
±2000  
ANSI/ESDA/JEDEC JS-001, all pins(1)  
V(ESD)  
Electrostatic discharge  
V
Charged device model (CDM), per JEDEC  
specification JESD22-C101, all pins(2)  
±500  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
3
NOM  
MAX  
3.6  
UNIT  
V
VCC  
TA  
Supply voltage  
3.3  
Ambient temperature  
Junction temperature  
TUSB212Q1  
TUSB212Q1  
-40  
-40  
105  
105  
°C  
TJ  
°C  
6.4 Thermal Information  
RWB (VQFN)  
12 PINS  
137.4  
62  
THERMAL METRIC(1)  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
67.2  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
1.9  
ΨJB  
67.3  
RθJC(bot)  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
4
版权 © 2017, Texas Instruments Incorporated  

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