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TUL1102G-TA3-T PDF预览

TUL1102G-TA3-T

更新时间: 2024-02-01 14:04:11
品牌 Logo 应用领域
友顺 - UTC 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
5页 243K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

TUL1102G-TA3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:HALOGEN FREE, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.64最大集电极电流 (IC):4 A
集电极-发射极最大电压:450 V配置:SINGLE
最小直流电流增益 (hFE):12JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TUL1102G-TA3-T 数据手册

 浏览型号TUL1102G-TA3-T的Datasheet PDF文件第1页浏览型号TUL1102G-TA3-T的Datasheet PDF文件第3页浏览型号TUL1102G-TA3-T的Datasheet PDF文件第4页浏览型号TUL1102G-TA3-T的Datasheet PDF文件第5页 
TUL1102  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
1100  
450  
V
12  
V
4
A
Collector Peak Current (tP <5 ms)  
Base Current  
ICM  
8
A
IB  
2
A
Base Peak Current (tP <5 ms)  
IBM  
4
70  
A
TO-220/TO-263  
TO-220F1  
Power Dissipation  
(TC = 25)  
PD  
W
30  
+150  
-65 ~ +150  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.  
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
1.78  
UNIT  
TO-220/TO-263  
TO-220F1  
/W  
Junction to Case  
θJC  
4.2  
„
ELECTRICAL CHARACTERISTICS (TC = 25unless otherwise specified)  
PARAMETER  
SYMBOL  
ICES  
TEST CONDITIONS  
VCE = 1100 V, VBE = 0  
VEB = 12 V, IB = 0  
MIN  
450  
TYP  
MAX UNIT  
Collector Cut-off Current  
100  
1
µA  
mA  
V
Emitter Cut-off Current  
IEBO  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCEO(SUS) IC = 100mA, IB = 0 (Note)  
VCE(SAT) IC = 2 A, IB = 400 mA (Note)  
VBE(SAT) IC = 2 A, IB = 400 mA (Note)  
1.5  
1.5  
70  
V
V
IC = 250mA, VCE = 5 V  
IC = 2A, VCE =5V  
35  
12  
DC Current Gain (Note)  
hFE  
20  
Storage Time  
Resistive Load  
tS  
tF  
IB1=0.5A,IB2=1A  
TP = 30 ms  
2.5  
300  
µs  
ns  
IC = 2.5 A,  
CC= 250 V  
V
Fall Time  
L = 2mH, C = 1.8nF  
BR 2.5A, 25< TC <125℃  
Avalanche Energy  
EAR  
6
mJ  
I
Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R203-034.B  
www.unisonic.com.tw  

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