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TSP190SB

更新时间： 2024-01-24 09:36:08
品牌 Logo 应用领域
强茂 - PANJIT 光电二极管
页数 文件大小 规格书
7页 111K
描述
SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

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TSP190SB 技术参数

生命周期：Obsolete零件包装代码：DO-214AA
包装说明：SMALL OUTLINE, R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.30.00.80风险等级：5.84
Is Samacsys：N最大转折电压：260 V
配置：SINGLE最大断态直流电压：190 V
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
通态非重复峰值电流：60 A元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified表面贴装：YES
端子形式：C BEND端子位置：DUAL
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TSP190SB 数据手册

 浏览型号TSP190SB的Datasheet PDF文件第1页浏览型号TSP190SB的Datasheet PDF文件第3页浏览型号TSP190SB的Datasheet PDF文件第4页浏览型号TSP190SB的Datasheet PDF文件第5页浏览型号TSP190SB的Datasheet PDF文件第6页浏览型号TSP190SB的Datasheet PDF文件第7页 
TSP058SB - TSP320SB  
SELECTION GUIDE  
Follow these steps to select the proper Thyristor surge protector for your application:  
1. Define the operating parameters for the circuit:  
• Ambient operating temperature range  
• Maximum telephone line operating current (highest battery and shortest copper loop)  
• Maximum operating voltage: (Maximum DC bias + peak ringing voltage)  
• Maximum surge current  
• System voltage damage threshold  
• Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature.  
3. Select surge current ratings (IPPS and ITSM) ≥ those which the application must withstand.  
4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the  
system.  
5. Verify that the maximum breakover voltage of the device is below the system damage threshold.  
6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range.  
7. Verify that the device's dimensions fit the application's space considerations.  
8. Independently evaluate and test the suitability and performance of the device in the application  
MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED)  
Non-Repetitive Peak  
On-State Surge Current  
Rating  
Non-Repetitive Peak Pulse Current  
Symbol  
Short-Circuit Current Wave  
Open-Circuit Voltage Wave  
Value  
I
PPS  
I TSM  
2/10 µs  
2/10 µs  
300 A  
8/20 µs 10/160 µs 5/310 µs  
10/560 µs 10/1000 µs  
1.2/50 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs  
225 A 150 A 115 A 100 A 80 A  
30A  
Notes  
(1,2,4,5,6)  
(1,2,3,4)  
Notes:  
% Ipps  
100%  
1. Thermal accumulation between successive surge tests is  
not allowed.  
2. The device under test initially must be in thermal  
equilibrium with TJ = 25 °C.  
80%  
60%  
40%  
20%  
0%  
3. Test at 1 cycle, 60 Hz.  
4. Surge ratings are non-repetitive because instantaneous  
junction temperatures may exceed the maximum rated TJ.  
Nevertheless, devices will survive many surge applications  
without degradation. Surge capability will not degrade over  
a device's typical operating life.  
5. Adjust the surge generator for optimum current-wave  
accuracy when both voltage and current wave  
specifications cannot be exactly met. The current wave is  
more important than the voltage wave for accurate surge  
evaluation.  
To Ta  
Tb  
T1  
Time  
6. The waveform is defined as A/B ms where:  
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)  
B (Duration time to 50% level of Ipps) = T1 - T0  
PAGE 2  
Ver: June 2001  
1234567

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