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TSH251CT PDF预览

TSH251CT

更新时间: 2022-02-26 11:01:57
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TSC /
页数 文件大小 规格书
8页 419K
描述
Micropower CMOS Output Hall Effect Switch

TSH251CT 数据手册

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TSH251  
Micropower CMOS Output Hall Effect Switch  
Magnetic Specifications (TSH251CT)  
Parameter Symbol  
Test Conditions  
Min.  
--  
Typ.  
30  
Max.  
55  
--  
Units  
Gauss  
Gauss  
Gauss  
Gauss  
Gauss  
BOPS  
S pole to branded side, B > BOP, VOUT On  
N pole to branded side, B > BOP, VOUT On  
S pole to branded side, B < BRP, VOUT Off  
N pole to branded side, B < BRP, VOUT Off  
|BOPx - BRPx|  
Operating  
Point  
BOPN  
-55  
10  
--  
-30  
20  
BRPS  
--  
Release  
Point  
BRPN  
-20  
10  
-10  
--  
Hysteresis  
BHYS  
--  
Note: 1G (Gauss) = 0.1mT (millitesta)  
Magnetic Specifications (TSH251CX)  
Parameter Symbol  
Test Conditions  
Min.  
--  
Typ.  
30  
Max.  
55  
--  
Units  
Gauss  
Gauss  
Gauss  
Gauss  
Gauss  
BOPS  
N pole to branded side, B > BOP, VOUT On  
S pole to branded side, B > BOP, VOUT On  
N pole to branded side, B < BRP, VOUT Off  
S pole to branded side, B < BRP, VOUT Off  
|BOPx - BRPx|  
Operating  
Point  
BOPN  
-55  
10  
--  
-30  
20  
BRPS  
--  
Release  
Point  
BRPN  
-20  
10  
-10  
--  
Hysteresis  
BHYS  
--  
Note: 1G (Gauss) = 0.1mT (millitesta)  
Output Behavior versus Magnetic Pole  
DC Operating Parameters: TA = -40 to 125oC, VCC = 1.8V ~ 6V  
Parameter  
South pole  
Test condition  
B<Bop[(-55)~(-10)]  
B=0 or B < BRP  
B>Bop(55~10)  
OUT  
Low  
High  
Low  
Null or weak magnetic field  
North pole  
TO-92S  
TSOT-23  
3/8  
Version: B14  

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