TSH251
Micropower CMOS Output Hall Effect Switch
Magnetic Specifications (TSH251CT)
Parameter Symbol
Test Conditions
Min.
--
Typ.
30
Max.
55
--
Units
Gauss
Gauss
Gauss
Gauss
Gauss
BOPS
S pole to branded side, B > BOP, VOUT On
N pole to branded side, B > BOP, VOUT On
S pole to branded side, B < BRP, VOUT Off
N pole to branded side, B < BRP, VOUT Off
|BOPx - BRPx|
Operating
Point
BOPN
-55
10
--
-30
20
BRPS
--
Release
Point
BRPN
-20
10
-10
--
Hysteresis
BHYS
--
Note: 1G (Gauss) = 0.1mT (millitesta)
Magnetic Specifications (TSH251CX)
Parameter Symbol
Test Conditions
Min.
--
Typ.
30
Max.
55
--
Units
Gauss
Gauss
Gauss
Gauss
Gauss
BOPS
N pole to branded side, B > BOP, VOUT On
S pole to branded side, B > BOP, VOUT On
N pole to branded side, B < BRP, VOUT Off
S pole to branded side, B < BRP, VOUT Off
|BOPx - BRPx|
Operating
Point
BOPN
-55
10
--
-30
20
BRPS
--
Release
Point
BRPN
-20
10
-10
--
Hysteresis
BHYS
--
Note: 1G (Gauss) = 0.1mT (millitesta)
Output Behavior versus Magnetic Pole
DC Operating Parameters: TA = -40 to 125oC, VCC = 1.8V ~ 6V
Parameter
South pole
Test condition
B<Bop[(-55)~(-10)]
B=0 or B < BRP
B>Bop(55~10)
OUT
Low
High
Low
Null or weak magnetic field
North pole
TO-92S
TSOT-23
3/8
Version: B14