Datasheet > TRS4E65F

TRS4E65F

更新时间： 2023-12-06 20:13:10

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	257K
描述
650 V/4 A SiC Schottky Barrier Diode, TO-220-2L

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TRS4E65F 数据手册

TRS4E65F

SiC Schottky Barrier Diode

TRS4E65F

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 2nd generation.

(2) High surge current capability : IFSM = 39A (Max)

(3) The junction capacitance is small : Cj = 16 pF (Typ.)

(4) The reverse current is small. : IR = 0.2 µA (Typ.)

3. Packaging and Internal Circuit

1: Cathode

2: Anode

TO-220-2L

Start of commercial production

2016-07

2018-06-27

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
TRS4E65H	TOSHIBA	获取价格	650 V/4 A SiC Schottky Barrier Diode, TO-220-2L
TRS4-ED11432/1	MINI	获取价格	RF Transformer, 2.5MHz Min, 750MHz Max
TRS4-ED11432/1+	MINI	获取价格	RF Transformer, 2.5MHz Min, 750MHz Max,
TRS4-ED11435/1+	MINI	获取价格	RF Transformer, 0.14MHz Min, 650MHz Max,
TRS4V65H	TOSHIBA	获取价格	650 V/4 A SiC Schottky Barrier Diode, DFN8×8
TRS5006	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 1A I(C) \| TO-66
TRS50-12	TTELEC	获取价格	Enclosed Power Supply 12V 50.4 Watt
TRS5014	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| TO-5
TRS5015	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 500V V(BR)CEO \| 400MA I(C) \| TO-37VAR
TRS50-15	TTELEC	获取价格	Enclosed Power Supply 15V 51 Watt