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TPS78218DRVT PDF预览

TPS78218DRVT

更新时间： 2025-07-19 11:46:15
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
25页 852K
描述
500nA, IQ 150mA, Ultra-Low Quiescent Current

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TPS78218DRVT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SON
包装说明：HVSON, SOLCC6,.08,25针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：0.86可调性：FIXED
标称回动电压 1：0.13 V最大绝对输入电压：6 V
最大输入电压：5.5 V最小输入电压：2.2 V
JESD-30 代码：S-PDSO-N6JESD-609代码：e4
长度：2 mm湿度敏感等级：1
功能数量：1输出次数：1
端子数量：6工作温度TJ-Max：125 °C
工作温度TJ-Min：-40 °C最高工作温度：125 °C
最低工作温度：-40 °C最大输出电流 1：0.15 A
最大输出电压 1：1.854 V最小输出电压 1：1.746 V
标称输出电压 1：1.8 V封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装等效代码：SOLCC6,.08,25
封装形状：SQUARE封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
包装方法：TR峰值回流温度（摄氏度）：260
认证状态：Not Qualified调节器类型：FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度：0.8 mm子类别：Other Regulators
表面贴装：YES技术：CMOS
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：3%
宽度：2 mmBase Number Matches：1

TPS78218DRVT 数据手册

 浏览型号TPS78218DRVT的Datasheet PDF文件第1页浏览型号TPS78218DRVT的Datasheet PDF文件第3页浏览型号TPS78218DRVT的Datasheet PDF文件第4页浏览型号TPS78218DRVT的Datasheet PDF文件第5页浏览型号TPS78218DRVT的Datasheet PDF文件第6页浏览型号TPS78218DRVT的Datasheet PDF文件第7页 
TPS782xx  
SBVS115B –AUGUST 2008–REVISED MAY 2010  
www.ti.com  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
ORDERING INFORMATION(1) (2)  
PRODUCT  
VOUT  
TPS782xx yyy z  
XX is the nominal output voltage  
YYY is the package designator.  
Z is the tape and reel quantity (R = 3000, T = 250).  
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the  
device product folder at www.ti.com.  
(2) Additional output voltage combinations are available on a quick-turn basis using innovative, factory EEPROM programming.  
Minimum-order quantities apply; contact your sales representative for details and availability  
ABSOLUTE MAXIMUM RATINGS(1)  
At TJ = –40°C to +125°C, unless otherwise noted. All voltages are with respect to GND.  
PARAMETER  
TPS782xx  
–0.3 to +6.0  
UNIT  
Input voltage range, VIN  
Enable  
V
V
V
–0.3 to VIN + 0.3V  
–0.3 to VIN + 0.3V  
Output voltage range, VOUT  
Maximum output current, IOUT  
Output short-circuit duration  
Total continuous power dissipation, PDISS  
Internally limited  
Indefinite  
See the Dissipation Ratings table  
Human body model (HBM)  
Charged device model (CDM)  
2
kV  
V
ESD rating  
500  
Operating junction temperature range, TJ  
Storage temperature range, TSTG  
–40 to +125  
–55 to +150  
°C  
°C  
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may  
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond  
those specified is not implied.  
DISSIPATION RATINGS  
DERATING FACTOR  
BOARD  
High-K(1)  
High-K(1)  
PACKAGE  
DRV  
RqJC  
RqJA  
ABOVE TA = +25°C  
TA < +25°C  
1540mW  
500mW  
TA = +70°C  
845mW  
TA = +85°C  
615mW  
20°C/W  
90°C/W  
65°C/W  
200°C/W  
15.4mW/°C  
DDC  
5.0mW/°C  
275mW  
200mW  
(1) The JEDEC high-K (2s2p) board used to derive this data was a 3-inch × 3-inch, multilayer board with 1-ounce internal power and  
ground planes and 2-ounce copper traces on top and bottom of the board.  
2
Submit Documentation Feedback  
Copyright © 2008–2010, Texas Instruments Incorporated  
 
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TPS78218DRVT 替代型号

型号 品牌 替代类型 描述 数据表
TPS78218DRVR TI

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