TPS62933
www.ti.com
SLUSEA4A – JUNE 2021 – REVISED DECEMBER 2021
7.4 Thermal Information
TPS62933
THERMAL METRIC(1)
DRL (SOT583), 8 PINS
UNIT
JEDEC(2)
EVM(3)
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
112.2
29.1
19.3
1.6
N/A
°C/W
°C/W
°C/W
°C/W
°C/W
N/A
N/A
Junction-to-top characterization parameter
Junction-to-board characterization parameter
N/A
ΨJB
19.2
N/A
Junction-to-ambient thermal resistance on official
EVM board
RθJA_EVM
N/A
60.2
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) The value of RθJA given in this table is only valid for comparison with other packages and can not be used for design purposes. These
values were simulated on a standard JEDEC board. They do not represent the performance obtained in an actual application.
(3) The real RθJA on TPS62933EVM is about 60.2°C/W, test condition: VIN = 24 V, VOUT = 5 V, IOUT = 3 A, TA = 25°C.
7.5 Electrical Characteristics
The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. These
specifications are interpreted as conditions that do not degrade the device parametric or functional specifications for the life
of the product containing it. TJ = –40°C to +150°C, VIN = 3.8 V to 30 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY (VIN PIN)
VIN
Operation input voltage
3.8
30
V
µA
µA
V
IQ
Nonswitching quiescent current
Shutdown supply current
EN = 5 V, VFB = 0.85 V
12
ISHDN
VEN = 0 V
2
Rising threshold
Falling threshold
Hysteresis
3.4
3.1
3.6
3.3
300
3.8
3.5
Input undervoltage lockout
thresholds
VIN_UVLO
V
mV
ENABLE (EN PIN)
VEN_RISE Enable threshold
VEN_FALL
Rising enable threshold
Falling disable threshold
1.21
1.17
1.28
V
V
Disable threshold
1.1
Ip
Ih
EN pullup current
VEN = 1.0 V
VEN = 1.5 V
0.7
1.4
µA
µA
EN pullup hysteresis current
VOLTAGE REFERENCE (FB PIN)
TJ = 25°C
792
788
784
800
800
800
808
812
816
0.15
mV
mV
mV
μA
VFB
FB voltage
TJ = 0°C to 85°C
TJ = –40°C to 150°C
VFB = 0.8 V
IFB
Input leakage current
INTEGRATED POWER MOSFETS
RDSON_HS High-side MOSFET on-resistance TJ = 25°C, VBST – SW = 5 V
RDSON_LS
CURRENT LIMIT
76
32
mΩ
mΩ
Low-side MOSFET on-resistance
TJ = 25°C
IHS_LIMIT
ILS_LIMIT
IPEAK_MIN
High-side MOSFET current limit
TPS62933
TPS62933
TPS62933
4.2
2.9
5
5.8
4.5
A
A
A
Low-side MOSFET current limit
Minimum peak inductor current
3.8
0.75
SOFT START (SS PIN)
ISS
Soft-start charge current
4.5
5.5
6.5
μA
OSCILLATOR FREQUENCY (RT PIN)
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