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TPB70R135MFD PDF预览

TPB70R135MFD

更新时间: 2024-03-03 10:10:07
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP 电子
页数 文件大小 规格书
13页 1737K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件,无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

TPB70R135MFD 数据手册

 浏览型号TPB70R135MFD的Datasheet PDF文件第1页浏览型号TPB70R135MFD的Datasheet PDF文件第2页浏览型号TPB70R135MFD的Datasheet PDF文件第3页浏览型号TPB70R135MFD的Datasheet PDF文件第5页浏览型号TPB70R135MFD的Datasheet PDF文件第6页浏览型号TPB70R135MFD的Datasheet PDF文件第7页 
TPB70R135MFD,TPP70R135MFD,TPW70R135MFD  
Wuxi Unigroup Microelectronics Co.,Ltd  
Typical Characteristics TJ = 25ºC, unless otherwise noted  
Figure 1. Output Characteristics  
20V  
10V  
8V  
7V  
6V  
5.5V  
5V  
4.5V  
Figure 2. Transfer Characteristics  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
VDS = 20V  
TJ = 25ºC  
TJ = 150ºC  
0
5
10  
15  
20  
0
2
4
6
8
10  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 4. Capacitance  
VGS = 0  
Figure 3. On-Resistance vs. Drain Current  
0.12  
105  
104  
VGS = 10V  
TJ = 25ºC  
f = 1MHz  
Ciss  
103  
102  
101  
100  
0.11  
0.10  
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
0
100  
200  
300  
400  
500  
600  
700  
ID, Drain Current (A)  
VDS, Drain-to-Source Voltage (V)  
Figure 5. Gate Charge  
Figure 6. Body Diode Forward Voltage  
12  
10  
8
102  
101  
100  
10-1  
VDD = 120V  
TJ = 125ºC  
TJ = 25ºC  
6
VDD = 560V  
4
2
0
0.0  
0.5  
1.0  
1.5  
0
10  
20  
30  
40  
50  
60  
Qg, Total Gate Charge (nC)  
VSD, Source-to-Drain Voltage (V)  
V1.0  
4
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