Datasheet > TPB65R950M

TPB65R950M

更新时间： 2024-04-09 19:00:46

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
12页	919K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPB65R950M 数据手册

TPA65R950M,TPB65R950M,TPD65R950M

Wuxi Unigroup Microelectronics Co.,Ltd

Typical Characteristics T_J= 25ºC, unless otherwise noted

Figure 7. On-Resistance vs.

Temperature

Figure 8. Breakdown voltage vs.

Junction Temperature

1.3

1.2

1.1

2.5

V_GS= 10V

I_D= 2A

I_D= 250uA

1.5

0.9

0.8

0.5

-30

120

150

-50 -25

75 100 125 150

T_J, Junction Temperature (ºC)

Figure 9. Transient Thermal Impedance For

Figure 10. Transient Thermal Impedance For

TO-220F

TO-263/TO-252

10¹

10⁰

D = 0.5

D = 0.2

D = 0.1

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

10^-1

D = 0.05

D = 0.02

D = 0.01

Single Pulse

10^-1

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

T_p, Pulse Width (s)

Figure 11. Safe Operation Area For

TO-263/TO-252

Figure 12. Safe Operation Area For

TO-220F

10²

10¹

10⁰

10^-1

10^-2

10¹

10⁰

10^-1

10^-2

t_p= 1us

t_p= 10us

t_p= 100us

t_p= 1ms

t_p= 10ms

t_p= 1us

t_p= 10us

t_p= 100us

t_p= 1ms

t_p= 10ms

10^-1

10⁰

10¹

10²

10³

10⁰

10¹

10²

10³

V_DS, Drain-Source Voltage(V)

www.tsinghuaicwx.com

V1.0

1 2 3 456 7 8...12

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