TPA65R950M,TPB65R950M,TPD65R950M
Wuxi Unigroup Microelectronics Co.,Ltd
Electrical Characteristics TJ = 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V, TJ = 25ºC
VDS = 650V, VGS = 0V, TJ = 150ºC
VGS = ±20V
650
--
--
--
--
--
--
--
1
V
Zero Gate Voltage Drain Current
IDSS
μA
--
100
±1
4.0
Gate-Source Leakage Current
Gate-Source Threshold Voltage
IGSS
--
μA
V
VGS(th)
VDS = VGS, ID = 250µA
2.5
Drain-Source On-State-Resistance
RDS(on)
RG
VGS = 10V, ID = 2A
--
--
0.87
5
0.95
--
Ω
Ω
Gate Resistance
f = 1.0MHz open drain
Dynamic Characteristics
Input Capacitance
Ciss
Coss
Crss
Qg
--
--
--
--
--
--
--
--
--
--
320
18
--
--
--
--
--
--
--
--
--
--
VGS = 0V,
VDS = 100V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
2.1
9.6
1.9
4.3
54
VDD = 520V, ID = 4.5A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qgs
Qgd
td(on)
tr
62
VDD = 400V, ID = 4.5A,
RG = 25Ω
ns
td(off)
tf
86
51
Drain-Source Body Diode Characteristics
Body Diode Forward Voltage
Reverse Recovery Time
VSD
trr
TJ = 25ºC, ISD = 2A, VGS = 0V
--
--
--
--
0.9
271
3.1
23
1.2
--
V
ns
μC
A
VR = 400V, IF = 4.5A,
diF/dt = 100A/μs
Reverse Recovery Charge
Qrr
Irrm
--
Peak Reverse Recovery Current
--
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 1.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. Identical low side and high side switch with identical RG
V1.0
3
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