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TPB65R600M

更新时间： 2024-04-09 18:59:25

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
13页	952K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPB65R600M 数据手册

TPA65R600M,TPB65R600M,TPD65R600M,TPR65R600M,TPU65R600M

Wuxi Unigroup Microelectronics Co.,Ltd

Typical Characteristics T_J= 25ºC, unless otherwise noted

Figure 13. Typ. Coss Stored Energy

3.5

2.5

1.5

0.5

50 100150200250300350400450500550600650

V_DS, Drain-Source Voltage(V)

V1.0

www.tsinghuaicwx.com

1...3 4 567 8 9...13

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