Supertex inc.
TP0604
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
► Low threshold (-2.4V max.)
► High input impedance
► Low input capacitance (95pF typical)
► Fast switching speeds
► Low on-resistance
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
► Free from secondary breakdown
► Low input and output leakage
Applications
► Logic level interfaces - ideal for TTL and CMOS
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers
► Telecom switches
Ordering Information
Product Summary
RDS(ON)
ID(ON)
Part Number
Package Option
Packing
BVDSS/BVDGS
VGS(th)
(V)
(max) (V)
(max) (Ω)
(min) (A)
TP0604N3-G
3-Lead TO-92
1000/Bag
-40
2.0
-2.0
-2.4
TP0604N3-G P002
TP0604N3-G P003
TP0604N3-G P005 3-Lead TO-92
TP0604N3-G P013
2000/Reel Pin Configuration
TP0604N3-G P014
DRAIN
TP2404NW
TP2404NJ
TP2404ND
Die in wafer form
---
SOURCE
Die on adhesive tape ---
Die in waffle pack ---
GATE
TO-92 (N3)
For packaged products, -G indicates package is RoHS compliant (‘Green’).
TO-92 taping specifications and winding styles per EIA-468 Standard.
Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF57 for layout and dimensions.
Product Marking
Absolute Maximum Ratings
Parameter
SiTP
0 6 0 4
YYWW
YY = Year Sealed
WW = Week Sealed
Value
BVDSS
BVDGS
±20V
= “Green” Packaging
Drain-to-source voltage
Drain-to-gate voltage
Package may or may not include the following marks: Si or
TO-92 (N3)
Gate-to-source voltage
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Doc.# DSFP-TP0604
C082012
Supertex inc.
www.supertex.com