Datasheet > TP2404NJ

TP2404NJ

更新时间： 2024-02-10 00:21:32

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	697K
描述
P-Channel Enhancement-Mode Vertical DMOS FET

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TP2404NJ 数据手册

Supertex inc.

TP0604

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (-2.4V max.)

► High input impedance

► Low input capacitance (95pF typical)

► Fast switching speeds

► Low on-resistance

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

Part Number

Package Option

Packing

BV_DSS/BV_DGS

V_GS(th)

(V)

(max) (V)

(max) (Ω)

(min) (A)

TP0604N3-G

3-Lead TO-92

1000/Bag

-40

2.0

-2.0

-2.4

TP0604N3-G P002

TP0604N3-G P003

TP0604N3-G P005 3-Lead TO-92

TP0604N3-G P013

2000/Reel Pin Conﬁguration

TP0604N3-G P014

DRAIN

TP2404NW

TP2404NJ

TP2404ND

Die in wafer form

---

SOURCE

Die on adhesive tape ---

Die in wafﬂe pack ---

GATE

TO-92 (N3)

For packaged products, -G indicates package is RoHS compliant (‘Green’).

TO-92 taping speciﬁcations and winding styles per EIA-468 Standard.

Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Speciﬁcation VF57 for layout and dimensions.

Product Marking

Absolute Maximum Ratings

Parameter

SiTP

0 6 0 4

YYWW

YY = Year Sealed

WW = Week Sealed

Value

BV_DSS

BV_DGS

±20V

= “Green” Packaging

Drain-to-source voltage

Drain-to-gate voltage

Package may or may not include the following marks: Si or

TO-92 (N3)

Gate-to-source voltage

Operating and storage temperature

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Doc.# DSFP-TP0604

C082012

Supertex inc.

www.supertex.com

12 3 4 5

中文翻译

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与TP2404NJ相关器件

型号	品牌	获取价格	描述	数据表
TP2404NW	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP2404-SR	3PEAK	获取价格	20MHz Bandwidth, Low Noise CMOS Opâamps
TP2404-TR	3PEAK	获取价格	20MHz Bandwidth, Low Noise CMOS Opâamps
TP241	ETC	获取价格	1.5 WATT and DUAL OUTPUT DC-DC CONVERTERS
TP2410L	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 240V V(BR)DSS \| 180MA I(D) \| TO-226AA
TP2410L18	VISHAY	获取价格	180mA, 240V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
TP2410L18-1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, P-Channel, Silicon, Met
TP2410L18-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, P-Channel, Silicon, Met
TP2410L-1TR1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, P-Channel, Silicon, Met
TP2410L-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, P-Channel, Silicon, Met

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