Datasheet > TN0702

TN0702

更新时间： 2024-02-22 14:05:08

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	476K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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TN0702 数据手册

TN0702

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

TO-92

BV_DSS

R_DS(ON)

(max)

1.3Ω

I_D(ON)

(min)

0.5A

V_GS(th)

(max)

1.0V

BV_DGS

20V

TN0702N3

Features

Low Threshold DMOS Technology

❏

Low threshold — 1.0 volt max

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

On resistance guaranteed at V_GS= 2, 3, and 5 volts

High input impedance

Low input capacitance —130pF typical

Fast switching speeds

Low on resistance

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low input and output leakage

Applications

❏

Logic level interfaces

Solid state relays

Package Option

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

S G D

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

*Distance of 1.6 mm from case for 10 seconds maximum.

Note: See Package Outline section for dimensions.

03/11/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TN0702相关器件

型号	品牌	获取价格	描述	数据表
TN0702_13	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0702N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN0702N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 20V, 1-Element, N-Channel, Silicon, Meta
TN0702N3-GP002	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0702N3-GP003	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0702N3-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET
TN0702N3-GP005	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0702N3-GP013	MICROCHIP	获取价格	SMALL SIGNAL, FET
TN0702N3-GP013	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN0702N3-GP014	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET

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