Datasheet > TMMBTA05

TMMBTA05

更新时间： 2024-04-09 18:59:14

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	372K
描述
60V,0.5A,General Purpose NPN Bipolar Transistor

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TMMBTA05 数据手册

NPN Silicon Epitaxial Planar Transistor

TMMBTA05

Electrical Characteristics (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test Condition

I_C= 100μA, I_E= 0

Min. Typ. Max. Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C= 1mA, I_B= 0

I_E= 10μA, I_C= 0

V_CB= 60V, I_E= 0

100

Collector Cut-off Current

I_CES

V_CE= 60V, I_B= 0

100

V_CE= 1V, I_C= 10mA

V_CE= 1V, I_C= 100mA

I_C= 100mA, I_B= 10mA

I_C= 100mA, V_CE= 1V

DC Current Gain

h_FE

Collector-emitter Saturation Voltage

Base-emitter Voltage

V_CE(sat)

V_BE(ON)

f_T

0.25

1.20

I_C= 20mA, V_CE= 5V

f = 20MHz

Current-Gain— Bandwidth Product

100

MHz

STM0322A: May 2023 [2.1]

www.gmesemi.com

123 4

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