MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
M
H
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
400
480
320
400
480
320
800
960
640
800
960
640
V
V
V
V
V
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Symbol
Parameter
Conditions
Ratings
86
Unit
A
IT (RMS), IF (RMS) RMS current
T (AV), IF (AV) Average current
I
Single-phase, half-wave 180° conduction, TC=86°C
One half cycle at 60Hz, peak value
55
A
ITSM, IFSM
Surge (non-repetitive) current
1100
A
2
2
3
2
I t
I t for fusing
Value for one cycle of surge current
5.0 × 10
100
A s
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125°C
Peak gate power dissipation
A/µs
W
5.0
Average gate power dissipation
Peak gate forward voltage
0.5
W
10
V
Peak gate reverse voltage
5.0
V
Peak gate forward current
2.0
A
Junction temperature
–40~125
–40~125
2500
°C
Tstg
Storage temperature
°C
Viso
Isolation voltage
Mounting torque
Weight
Charged part to case
V
1.47~1.96
15~20
1.96~2.94
20~30
160
N·m
kg·cm
N·m
kg·cm
g
Main terminal screw M5
—
—
Mounting screw M6
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Typ.
—
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
10
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
mA
mA
V
—
—
10
IDRM
—
—
1.35
—
VTM, VFM
dv/dt
VGT
Tj=125°C, ITM=IFM=165A, instantaneous meas.
500
—
—
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM
V/µs
V
—
3.0
—
Gate trigger voltage
Tj=25°C, VD=6V, RL=2Ω
0.25
15
—
VGD
Gate non-trigger voltage
Gate trigger current
Tj=125°C, VD=1/2VDRM
V
—
100
0.5
0.2
IGT
Tj=25°C, VD=6V, RL=2Ω
mA
°C/W
°C/W
—
—
Rth (j-c)
Rth (c-f)
Thermal resistance
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
—
—
Contact thermal resistance
Measured with a 500V megohmmeter between main terminal
and case
10
—
—
—
Insulation resistance
MΩ
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999