TLP781F(YH)

更新时间： 2024-01-05 07:24:57

品牌	Logo	应用领域
东芝 - TOSHIBA		光电输出元件
页数	文件大小	规格书
15页	340K
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数据手册

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TLP781F(YH) 数据手册

TLP781/TLP781F

TOSHIBA Photocoupler GaAs IRED & Photo−Transistor

TLP781, TLP781F

TLP781

Unit in mm

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission Between Different Voltage

Circuits

The TOSHIBA TLP781 consists of a silicone photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a

four lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kV

(min)).

RMS

TOSHIBA

Weight: 0.25g (typ.)

TLP781F

•

TLP781 : 7.62mm pitch type DIP4

TLP781F : 10.16mm pitch type DIP4

Collector-emitter voltage: 80V (min.)

Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

Unit in mm

•

Isolation voltage: 5000V

(min.)

rms

UL recognized: UL1577, file No. E67349

BSI approved: BS EN60065:2002

Approved no.8961

BS EN60950-1:2006

Approved no.8962

•

SEMKO approval: EN60950-1,EN60065 under plan

Option(D4)type

VDE approved : DIN EN60747-5-2

Certificate No. 40021173

(Note): When an EN60747-5-2 approved type is needed,

TOSHIBA

Please designate “Option (D4)”

Construction mechanical rating

Weight: 0.25g (typ.)

Pin Configurations

(top view)

•

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

Creepage distance

Clearance

6.5mm(min)

0.4mm(min)

8.0mm(min)

0.4mm(min)

Insulation thickness

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

2007-12-05

12 3 4 5 6 7...15

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