Datasheet > TLP785F

TLP785F

更新时间： 2024-01-04 13:31:10

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
16页	374K
描述
Office Equipment Household Appliances

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中文翻译

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数据手册

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TLP785F 数据手册

TLP785,TLP785F

TOSHIBA Photocoupler GaAs IRED & Photo−Transistor

TLP785,TLP785F

TLP785

Unit: mm

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission Between Different Voltage

Circuits

The TOSHIBA TLP785 consists of a silicone phototransistor optically

coupled to a gallium arsenide (GaAs) infrared emitting diode in a four

lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kV

(min)).

RMS

TLP785F is a lead forming type for the long creepage surface mounting

of TLP785.

TOSHIBA

11-5L1

Weight: 0.32 g (typ.)

TLP785F

•

TLP785: 7.62mm pitch type DIP4

TLP785F: 10.16mm pitch type DIP4

Collector-emitter voltage: 80V (min.)

Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

Unit: mm

•

Isolation voltage: 5000V

(min.)

rms

UL approved: UL1577, file No. E67349

BSI under application: BS EN60065:2002

BS EN60950-1:2006

•

SEMKO under application:EN60065:2002

EN60950-1:2001, EN60335-1:2002

Option(D4)type

VDE approved: DIN EN60747-5-2

(Note): When an EN60747-5-2 approved type is needed,

Please designate “Option (D4)”

TOSHIBA

11-5L102

Weight: 0.32g (typ.)

•

Construction mechanical rating

Pin Configurations

(top view)

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

Creepage distance

Clearance

7.0mm(min)

0.4mm(min)

4.0mm(min)

8.0mm(min)

0.4mm(min)

4.0mm(min)

Insulation thickness

Inner creepage distance

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

2012-02-20

12 3 4 5 6 7...16

中文翻译

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