Datasheet > TLP781F(GR,F)

TLP781F(GR,F)

更新时间： 2024-02-20 02:11:50

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
15页	392K
描述
PHOTO TRANSISTOR 60MA 4-DIP WIDE

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技术参数
数据手册

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TLP781F(GR,F) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
Reach Compliance Code：	unknown	风险等级：	6.08
当前传输比率-最小值：	100%	最大正向电流：	0.025 A
最大正向电压：	1.3 V	最大绝缘电压：	5000 V
安装特点：	THROUGH HOLE MOUNT	元件数量：	1
最大通态电流：	0.05 A	最高工作温度：	110 °C
最低工作温度：	-55 °C	最大功率耗散：	0.15 W
子类别：	Optocoupler - Transistor Outputs	表面贴装：	NO
Base Number Matches：	1

TLP781F(GR,F) 数据手册

TLP781/TLP781F

TOSHIBA Photocoupler GaAs IRED & Photo−Transistor

TLP781, TLP781F

TLP781

Unit: mm

Office Equipment

Household Appliances

Solid State Relays

Switching Power Supplies

Various Controllers

Signal Transmission between Different Voltage

Circuits

The TOSHIBA TLP781 consists of a silicone photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a

four lead plastic DIP (DIP4) with having high isolation voltage

(AC: 5kV

(min)).

RMS

TOSHIBA

•

TLP781 : 7.62mm pitch type DIP4

TLP781F : 10.16mm pitch type DIP4

Collector-emitter voltage: 80V (min)

Current transfer ratio: 50% (min)

Rank GB: 100% (min)

Weight: 0.25g (typ.)

Unit: mm

TLP781F

•

Isolation voltage: 5000V

(min)

rms

UL recognized: UL1577, file No. E67349

BSI approved: BS EN60065:2002

Approved no.8961

BS EN60950-1:2006

Approved no.8962

•

SEMKO approved:EN60065:2002

Approved no.800514

EN60950-1:2001, EN60335-1:2002

Approved no.800517

Option(D4)type

VDE approved : DIN EN60747-5-5

Certificate No. 40021173

TOSHIBA

Weight: 0.25g (typ.)

(Note): When an EN60747-5-5 approved type is needed,

Please designate “Option (D4)”

Pin Configurations

(top view)

•

Construction mechanical rating

7.62mm Pitch

Standard Type

10.16mm Pitch

TLPxxxF Type

1 : Anode

Creepage distance

Clearance

6.5mm (min)

0.4mm (min)

8.0mm (min)

0.4mm (min)

2 : Cathode

3 : Emitter

4 : Collector

Insulation thickness

Start of commercial production

2007/07

2014-09-08

12 3 4 5 6 7...15

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