Datasheet > TLP733F(GB,M,F)

TLP733F(GB,M,F)

更新时间： 2024-01-23 19:00:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	166K
描述
Transistor Output Optocoupler

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数据手册

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TLP733F(GB,M,F) 数据手册

TLP733,TLP734

TOSHIBA Photocoupler GaAs Ired&Photo−Transistor

TLP733, TLP734

Office Machine

Household Use Equipment

Solid State Relay

Unit in mm

Switching Power Supply

The TOSHIBA TLP733 and TLP734 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a six

lead plastic DIP.

TLP734 is no−base internal connection for high−EMI environments.

Collector−emitter voltage: 55 V (min.)

Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

UL recognized: UL1577, file no. E67349

BSI approved: BS EN60065: 1994

Certificate no. 7364

BS EN60950: 1992

Certificate no. 7365

SEMKO approved: SS4330784

TOSHIBA

11−7A8

Weight: 0.42 g

Certificate no. 9325163, 9522142

Isolation voltage: 4000 V (min.)

rms

Option (D4) type

VDE approved: DIN VDE0884 / 06.92,

Certificate no. 74286, 91808

Maximum operating insulation voltage: 630, 890 V

Highest permissible over voltage: 6000, 8000 V

Pin Configurations (top view)

TLP733

TLP734

(Note) When a VDE0884 approved type is needed,

please designate the “Option (D4)”

7.62 mm pich

standard type

: 7.0 mm (min.)

10.16 mm pich

TLP×××F type

8.0 mm (min.)

4.0 mm (min.)

0.5 mm (min.)

Creepage distance

Clearance

: 7.0 mm (min.)

Internal creepage path : 4.0 mm (min.)

Insulation thickness : 0.5 mm (min.)

1: Anode

2: Cathode

3: Nc

1: Anode

2: Cathode

3: Nc

4: Emitter

5: Collector

6: Base

4: Emitter

5: Collector

6: Nc

2002-09-25

12 3 4 5 6 7...10

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