TLP331,TLP332
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Symbol
Test Condition
= 10 mA
F
Min
Typ.
Max
Unit
V
I
1.0
―
―
55
7
1.15
―
1.3
10
―
―
―
V
μA
pF
V
F
Reverse current
I
V = 5 V
R
R
Capacitance
C
T
V = 0 V, f = 1 MHz
30
―
V
V
I
I
= 0.5 mA
= 0.1 mA
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
(BR)CEO
(BR)ECO
C
E
―
V
Collector-base breakdown voltage
(TLP331)
V
I
I
= 0.1 mA
= 0.1 mA
80
7
―
―
―
―
V
V
(BR)CBO
(BR)EBO
C
E
Emitter-base breakdown voltage
(TLP331)
V
V
V
V
= 24 V
―
―
10
2
100
50
nA
CE
CE
CE
BE
CB
CE
Collector dark current
I
CEO
= 24 V, Ta = 85 °C
μA
= 24 V, Ta = 85 °C
= 1 MΩ
Collector dark current (TLP331)
I
I
―
0.5
10
μA
CER
R
Collector dark current (TLP331)
DC forward current gain (TLP331)
Capacitance (collector to emitter)
V
V
= 10 V
―
―
―
0.1
1000
12
―
―
―
nA
―
CBO
h
= 5 V, I = 0.5 mA
C
FE
C
V = 0 V , f = 1 MHz
pF
CE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
%
100
200
50
―
―
―
―
10
—
0.2
―
1200
1200
―
I
I
= 1 mA, V = 0.5 V
F
F
CE
Current transfer ratio
I /I
C F
Rank BV
= 0.5 mA, V = 1.5 V
CE
Low input CTR
I /I
C F(low)
%
Rank BV
100
―
―
Base photo-current (TLP331)
I
I
I
= 1 mA, V = 5 V
―
μA
PB
F
CB
= 0.5 mA, I = 1 mA
―
0.4
―
C
F
V
―
V
Collector-emitter saturation voltage
CE(sat)
I
= 1 mA, I = 1 mA
F
C
Rank BV
―
0.4
Coupled Electrical Characteristics (Ta = 25 to 75°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
%
50
100
―
―
―
―
―
―
―
I
I
= 1 mA, V = 0.5 V
F
F
CE
Current transfer ratio
I /I
C F
Rank BV
50
= 0.5 mA, V = 1.5 V
CE
Low input CTR
I /I
C F(low)
%
Rank BV
―
100
© 2019
Toshiba Electronic Devices & Storage Corporation
3
2019-06-24