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TLP332(BV-LF5)

更新时间： 2024-02-25 20:24:46
品牌 Logo 应用领域
东芝 - TOSHIBA 输出元件光电
页数 文件大小 规格书
8页 188K
描述
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, PLASTIC, DIP-8

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中文翻译

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TLP332(BV-LF5) 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active包装说明：PLASTIC, DIP-8
Reach Compliance Code：unknownHTS代码：8541.40.80.00
风险等级：5.79Is Samacsys：N
其他特性：UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min：55 V
配置：SINGLE标称电流传输比：200%
最大暗电源：100 nA最大正向电流：0.06 A
最大绝缘电压：5000 VJESD-609代码：e0
元件数量：1最高工作温度：75 °C
最低工作温度：-25 °C光电设备类型：TRANSISTOR OUTPUT OPTOCOUPLER
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

TLP332(BV-LF5) 数据手册

 浏览型号TLP332(BV-LF5)的Datasheet PDF文件第1页浏览型号TLP332(BV-LF5)的Datasheet PDF文件第3页浏览型号TLP332(BV-LF5)的Datasheet PDF文件第4页浏览型号TLP332(BV-LF5)的Datasheet PDF文件第5页浏览型号TLP332(BV-LF5)的Datasheet PDF文件第6页浏览型号TLP332(BV-LF5)的Datasheet PDF文件第7页 
TLP331,TLP332  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
50  
−0.7  
1
mA  
F
Forward current derating (Ta ≥ 39°C)  
Peak forward current (100μs pulse, 100pps)  
Reverse Voltage  
ΔI /°C  
F
mA / °C  
I
A
V
FP  
V
5
R
Junction temperature  
T
125  
55  
80  
7
°C  
V
j
Collector−emitter voltage  
Collector−base voltage (TLP331)  
Emitter−collector voltage  
V
V
V
CEO  
CBO  
ECO  
V
V
Emitter−base voltage (TLP331)  
V
7
V
EBO  
Collector current  
I
50  
mA  
C
Power dissipation  
P
150  
−1.5  
mW  
mW / °C  
°C  
C
Power dissipation derating (Ta ≥ 25°C)  
Junction temperature  
ΔP / °C  
C
T
125  
j
Storage temperature range  
T
−55~125  
−55~100  
260  
°C  
stg  
opr  
Operating temperature range  
T
°C  
Lead soldering temperature (10s)  
Total package power dissipation  
Total package power dissipation derating (Ta≥25°C)  
Isolation voltage (AC, 1min., RH ≤ 60%)  
T
°C  
sol  
P
250  
mW  
T
P /°C  
T
−2.5  
mW / °C  
Vrms  
(Note 1)  
BV  
5000  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted  
together.  
Recommended Operating Conditions  
Characteristic  
Supply voltage  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
―
—
5
1.6  
1
25  
25  
10  
75  
V
CC  
Forward current  
I
mA  
mA  
°C  
F
Collector current  
I
―
C
Operating temperature  
T
opr  
−25  
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
2
2007-10-01  
12345678

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