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TLP331BV

更新时间： 2024-01-31 01:27:00
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管输出元件
页数 文件大小 规格书
8页 363K
描述
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP

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TLP331BV 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DIP-6Reach Compliance Code：unknown
风险等级：5.25其他特性：UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：55 V配置：SINGLE
标称电流传输比：200%最大暗电源：100 nA
最大正向电流：0.025 A最大绝缘电压：5000 V
元件数量：1最高工作温度：75 °C
最低工作温度：-25 °C光电设备类型：TRANSISTOR OUTPUT OPTOCOUPLER

TLP331BV 数据手册

 浏览型号TLP331BV的Datasheet PDF文件第1页浏览型号TLP331BV的Datasheet PDF文件第3页浏览型号TLP331BV的Datasheet PDF文件第4页浏览型号TLP331BV的Datasheet PDF文件第5页浏览型号TLP331BV的Datasheet PDF文件第6页浏览型号TLP331BV的Datasheet PDF文件第7页 
TLP331,TLP332  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Forward current  
I
50  
-0.7  
1
mA  
mA/°C  
A
F
Forward current derating (Ta ≥ 39°C)  
Peak forward current (100 μs pulse, 100 pps)  
Reverse Voltage  
ΔI /°C  
F
I
FP  
V
P
5
V
R
D
50  
mW  
mW/°C  
Diode power dissipation  
ΔP /°C  
-0.58  
Diode power dissipation derating (Ta >39 °C)  
Junction temperature  
D
T
125  
55  
80  
7
°C  
V
j
Collector-emitter voltage  
V
V
V
V
CEO  
CBO  
ECO  
Collector-base voltage (TLP331)  
Emitter-collector voltage  
V
V
Emitter-base voltage (TLP331)  
7
V
EBO  
Collector current  
I
50  
mA  
C
Power dissipation  
P
150  
-1.5  
mW  
mW/°C  
°C  
C
Power dissipation derating (Ta ≥ 25°C)  
Junction temperature  
ΔP °C  
C/  
T
125  
j
Storage temperature range  
T
-55 to 125  
-55 to 100  
260  
°C  
stg  
opr  
Operating temperature range  
T
°C  
Lead soldering temperature (10 s)  
Total package power dissipation  
Total package power dissipation derating (Ta ≥ 25°C)  
Isolation voltage (AC, 60 s, RH ≤ 60 %)  
T
°C  
sol  
P
250  
mW  
mW/°C  
Vrms  
T
P /°C  
T
-2.5  
(Note 1)  
BV  
5000  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc.).  
Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted  
together.  
Recommended Operating Conditions  
Characteristics  
Supply voltage  
Symbol  
Min  
Typ.  
Max  
Unit  
V
―
—
5
1.6  
1
25  
25  
10  
75  
V
CC  
Forward current  
I
mA  
mA  
°C  
F
Collector current  
I
―
C
Operating temperature  
T
-25  
―
opr  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
2
2019-06-24  
12345678

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