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TLP183(E

更新时间: 2024-02-02 20:42:38
品牌 Logo 应用领域
东芝 - TOSHIBA 输出元件光电
页数 文件大小 规格书
20页 695K
描述
Transistor Output Optocoupler, 1-Element, 3750V Isolation

TLP183(E 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8541.40.80.00Factory Lead Time:12 weeks
风险等级:5.07Is Samacsys:N
当前传输比率-最小值:50%最大正向电流:0.05 A
最大正向电压:1.4 V最大绝缘电压:3750 V
安装特点:SURFACE MOUNT元件数量:1
最大通态电流:0.05 A最高工作温度:125 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.15 W子类别:Optocoupler - Transistor Outputs
表面贴装:YESBase Number Matches:1

TLP183(E 数据手册

 浏览型号TLP183(E的Datasheet PDF文件第1页浏览型号TLP183(E的Datasheet PDF文件第2页浏览型号TLP183(E的Datasheet PDF文件第4页浏览型号TLP183(E的Datasheet PDF文件第5页浏览型号TLP183(E的Datasheet PDF文件第6页浏览型号TLP183(E的Datasheet PDF文件第7页 
TLP183  
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Input forward current  
Symbol  
Note  
Rating  
Unit  
LED  
IF  
IFP  
50  
1
mA  
A
Input forward current (pulsed)  
Input forward current derating  
Input reverse voltage  
(Note 1)  
(Ta 90 )  
(Ta 90 )  
IF/Ta  
VR  
-1.5  
5
mA/  
V
Input power dissipation  
PD  
100  
-2.9  
mW  
mW/  
Input power dissipation  
derating  
PD/Ta  
Junction temperature  
Tj  
VCEO  
VECO  
IC  
125  
80  
V
Detector Collector-emitter voltage  
Emitter-collector voltage  
Collector current  
7
V
50  
mA  
mW  
mW/  
Collector power dissipation  
PC  
150  
-1.5  
Collector power dissipation  
derating  
(Ta 25 )  
PC/Ta  
Junction temperature  
Common Operating temperature  
Storage temperature  
Tj  
Topr  
125  
-55 to 125  
-55 to 125  
260  
Tstg  
Lead soldering temperature  
Total power dissipation  
(10 s)  
Tsol  
PT  
200  
mW  
mW/  
Total power dissipation  
derating  
(Ta 25 )  
PT/Ta  
-2.0  
Isolation voltage  
AC, 60 s, R.H. 60 %  
BVS  
(Note 2)  
3750  
Vrms  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz  
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are  
shorted together.  
7. Electrical Characteristics (Unless otherwise specified, Ta = 25 )  
Characteristics  
Input forward voltage  
Symbol  
Note  
Test Condition  
IF = 10 mA  
Min  
Typ.  
Max  
Unit  
LED  
VF  
IR  
1.1  
1.25  
1.4  
5
V
µA  
pF  
V
Input reverse current  
Input capacitance  
VR = 5 V  
Ct  
V = 0 V, f = 1 MHz  
IC = 0.5 mA  
30  
Detector Collector-emitter breakdown  
voltage  
V(BR)CEO  
80  
Emitter-collector breakdown  
voltage  
V(BR)ECO  
IDARK  
IE = 0.1 mA  
7
V
Dark Current  
VCE = 48 V  
0.01  
2
0.08  
50  
µA  
VCE = 48 V, Ta = 85   
V = 0 V, f = 1 MHz  
Collector-emitter capacitance  
CCE  
10  
pF  
©2016-2017  
Toshiba Electronic Devices & Storage Corporation  
2017-07-26  
Rev.4.0  
3

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