Datasheet > TLE493D-P2B6 A1

TLE493D-P2B6 A1

更新时间： 2023-09-03 20:29:53

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
21页	978K
描述
The Infineon TLE493D-P2B6 is our newest magnetic 3D Hall sensor enabled by new and improved accuracy. It is the best product for high performance applications with respect to pricing and package size.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TLE493D-P2B6 A1 数据手册

TLE493D-P2B6

High Accuracy Low Power 3D Hall Sensor with I²C Interface

Specification

This sensor is intended to be used in an automotive environment. This chapter describes the environmental

conditions required by the device (magnetic, thermal and electrical).

2.1

Absolute maximum ratings

Stresses above those listed under “Absolute maximum ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Furthermore, only single error cases are

assumed. More than one stress/error case may also damage the device.

Exposure to absolute maximum rating conditions for extended periods may aﬀect device reliability. During

absolute maximum rating overload conditions the voltage on V_DDpin with respect to ground (GND) must not

exceed the values defined by the absolute maximum ratings.

Table 2

Absolute maximum ratings

Symbol

Parameter

Values

Unit

Note or test condition

Min.

-40

-0.3

–

Typ.

Max.

125

3.5

Junction temperature

Voltage on V_DD

T_j

–

°C

V_DD

B_max

V_max

Magnetic field

±1

Voltage range on any pin to GND

-0.1

3.5

open-drain outputs are

not current limited.

Table 3

ESD protection²⁾

Ambient temperature T_A= 25°C

Parameter

Symbol

Values

Unit

Note or test condition

Min.

Typ.

Max.

ESD voltage (HBM)³⁾

ESD voltage (CDM)⁴⁾

V_ESD

–

±2.0

±0.75

±0.5

R = 1.5 kΩ, C = 100 pF

for corner pins

all pins

Characterization of ESD is carried out on a sample basis, not subject to production test.

Human body model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.

Charged device model (CDM), ESD susceptibility according to JEDEC JESD22-C101.

Datasheet

1.0

2021-01-12

1...5 6 789 10 11...21

中文翻译

下载PDF

与TLE493D-P2B6 A1相关器件

型号	品牌	获取价格	描述	数据表
TLE493D-P2B6 A2	INFINEON	获取价格	The Infineon TLE493D-P2B6 is our newest magnetic 3D Hall sensor enabled by new and improve
TLE493D-P2B6 A3	INFINEON	获取价格	The Infineon TLE493D-P2B6 is our newest magnetic 3D Hall sensor enabled by new and improve
TLE493D-W2B6	INFINEON	获取价格	Hall Effect Sensor,
TLE493D-W2B6 A0	INFINEON	获取价格	Infineon´s 3D magnetic sensor family TLE493D
TLE493D-W2B6 A1	INFINEON	获取价格	With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dy
TLE493D-W2B6 A2	INFINEON	获取价格	Infineon´s 3D magnetic sensor family TLE493D
TLE493D-W2B6 A3	INFINEON	获取价格	Infineon´s 3D magnetic sensor family TLE493D
TLE493D-W2B6A0	INFINEON	获取价格	Low Power 3D Hall Sensor with I2C Interface and Wake Up Function
TLE493D-W2B6A1	INFINEON	获取价格	Low Power 3D Hall Sensor with I2C Interface and Wake Up Function
TLE493DW2B6A1HTSA1	INFINEON	获取价格	Hall Effect Sensor,

与TLE493D-P2B6 A1相关文章

压敏电阻器在直流电路中的过压保护应用探讨
2024-06-07

2
电感耐压值及其与电感大小的关系
2024-06-07

5
CNY17F光耦合器：特性、应用、封装、引脚功能及替换型号解析
2024-06-07

4
DS1307资料解析：特性、引脚说明、替代推荐
2024-06-07

3

产品中心

服务支持

精选活动

关于我们

帮助中心

TLE493D-P2B6 A1

TLE493D-P2B6 A1 数据手册

与TLE493D-P2B6 A1相关器件

与TLE493D-P2B6 A1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TLE493D-P2B6 A1

TLE493D-P2B6 A1 数据手册

与TLE493D-P2B6 A1相关器件

与TLE493D-P2B6 A1相关文章

您还可以找

您在本页遇到什么问题？