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TLE2425JG PDF预览

TLE2425JG

更新时间: 2024-01-13 17:01:58
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
24页 772K
描述
SPECIALTY ANALOG CIRCUIT, CDIP8, GLASS SEALED, CERAMIC, DIP-8

TLE2425JG 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:GLASS SEALED, CERAMIC, DIP-8
针数:8Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.63
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:R-GDIP-T8
长度:9.6 mm功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:5.08 mm
子类别:Power Management Circuits最大供电电压 (Vsup):40 V
最小供电电压 (Vsup):4 V标称供电电压 (Vsup):5 V
表面贴装:NO温度等级:MILITARY
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

TLE2425JG 数据手册

 浏览型号TLE2425JG的Datasheet PDF文件第2页浏览型号TLE2425JG的Datasheet PDF文件第3页浏览型号TLE2425JG的Datasheet PDF文件第4页浏览型号TLE2425JG的Datasheet PDF文件第5页浏览型号TLE2425JG的Datasheet PDF文件第6页浏览型号TLE2425JG的Datasheet PDF文件第7页 
ꢁꢂ ꢃꢄ ꢅꢄ ꢆ  
ꢇꢈ ꢃꢉꢊꢋ ꢊꢌ ꢍ ꢎꢊ ꢈꢁ ꢏꢐꢂ ꢑ ꢈꢌ ꢏ ꢍ ꢒ  
SLOS065D − MARCH 1991 − REVISED APRIL 2002  
D
D
D
2.5-V Virtual Ground for 5-V/GND Analog  
Systems  
D
Excellent Regulation Characteristics  
− Output Regulation  
−45 µV Typ at I = 0 to 10 mA  
O
High Output-Current Capability  
Sink or Source . . . 20 mA Typ  
+15 µV Typ at I = 0 to +10 mA  
O
− Input Regulation = 1.5 µV/V Typ  
Low-Impedance Output . . . 0.0075 Typ  
Macromodel Included  
Micropower Operation . . . 170 µA Typ  
D
D
description  
OUTPUT REGULATION  
100  
In signal-conditioning applications using a single  
V = 5 V  
I
power source, a reference voltage is required for  
termination of all signal grounds. To accomplish  
this, engineers have typically used solutions  
consisting of resistors, capacitors, operational  
amplifiers, and voltage references. Texas Instru-  
ments has eliminated all of those components  
with one easy-to-use 3-terminal device. That  
device is the TLE2425 precision virtual ground.  
80  
60  
T
= 40°C  
A
T
= 0°C  
A
40  
T
A
= 55°C  
20  
0
T
= 125°C  
= 25°C  
A
T
A
= 25°C  
T
A
20  
Use of the TLE2425 over other typical circuit  
solutions gives the designer increased dynamic  
signal range, improved signal-to-noise ratio,  
lower distortion, improved signal accuracy, and  
easier interfacing to ADCs and DACs. These  
benefits are the result of combining a precision  
micropower voltage reference and a high-perfor-  
mance precision operational amplifier in a single  
silicon chip. It is the precision and performance of  
these two circuit functions together that yield such  
dramatic system-level performance.  
40  
60  
80  
T
= 125°C  
A
T
A
= 55°C  
100  
10  
−8 −6 −4 −2  
0
2
4
8
10  
6
I
− Output Current − mA  
O
The TLE2425 improves input regulation as well as output regulation and, in addition, reduces output impedance  
and power dissipation in a majority of virtual-ground-generation circuits. Both input regulation and load  
regulation exceed 12 bits of accuracy on a single 5-V system. Signal-conditioning front ends of data acquisition  
systems that push 12 bits and beyond can use the TLE2425 to eliminate a major source of system error.  
AVAILABLE OPTIONS  
PLASTIC  
TO-226AA  
(LP)  
SMALL OUTLINE  
T
A
(D)  
0°C to 70°C  
40°C to 85°C  
55°C to 125°C  
TLE2425CD  
TLE2425ID  
TLE2425MD  
TLE2425CD  
TLE2425ID  
The D package is available taped and reeled. Add R suffix to  
the device type (e.g., TLE2425CDR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢁꢞ  
Copyright 2002, Texas Instruments Incorporated  
ꢚ ꢞ ꢛ ꢚꢓ ꢔꢨ ꢖꢕ ꢙ ꢡꢡ ꢟꢙ ꢗ ꢙ ꢘ ꢞ ꢚ ꢞ ꢗ ꢛ ꢣ  
1
WWW.TI.COM  
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443  

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