Datasheet > TK25Z60X

TK25Z60X

更新时间： 2024-09-26 14:56:55

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TK25Z60X 数据手册

TK25Z60X

MOSFETs Silicon N-Channel MOS (DTMOS-H)

TK25Z60X

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) High-speed switching properties with lower capacitance.

(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

3. Packaging and Internal Circuit

1. Drain (Heat sink)

2. Source 1

3. Source 2

4. Gate

Notice: Only use source 2 pin for

gate input signal return. Please

make sure that the main current

flows into the source 1 pin.

TO-247-4L(T)

Start of commercial production

2015-11

2017-12-06

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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