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TISP2082F3DR PDF预览

TISP2082F3DR

更新时间： 2024-01-10 00:54:29
品牌 Logo 应用领域
德州仪器 - TI 光电二极管
页数 文件大小 规格书
16页 507K
描述
82V, 4A, SILICON SURGE PROTECTOR, SOP-8

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中文翻译

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TISP2082F3DR 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.81Is Samacsys：N
其他特性：UL RECOGNIZED最大转折电压：82 V
配置：DELTA CONNECTED, 3 ELEMENTS最大断态直流电压：66 V
JESD-30 代码：R-PDSO-G8通态非重复峰值电流：4 A
元件数量：3端子数量：8
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TISP2082F3DR 数据手册

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TISP2072F3, TISP2082F3  
DUAL SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
MARCH 1994 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
●
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
D PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
1
2
3
4
8
7
6
5
G
G
G
G
T
NC  
NC  
R
V
V
(BO)  
DRM  
DEVICE  
V
V
‘2072F3  
‘2082F3  
58  
66  
72  
82  
MDXXAE  
NC - No internal connection  
●
●
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
P PACKAGE  
(TOP VIEW)  
Rated for International Surge Wave Shapes  
1
2
T
8
7
6
5
T
I
TSP  
G
G
WAVE SHAPE  
STANDARD  
A
3
4
G
R
G
R
2/10 µs  
8/20 µs  
FCC Part 68  
ANSI C62.41  
FCC Part 68  
FCC Part 68  
RLM 88  
80  
70  
60  
45  
38  
50  
50  
50  
35  
MDXXAF  
10/160 µs  
10/560 µs  
0.5/700 µs  
Specified T terminal ratings require connection of pins 1 and 8.  
Specified R terminal ratings require connection of pins 4 and 5.  
FTZ R12  
SL PACKAGE  
(TOP VIEW)  
10/700 µs  
VDE 0433  
CCITT IX K17/K20  
REA PE-60  
10/1000 µs  
1
2
3
T
G
R
●
Surface Mount and Through-Hole Options  
PACKAGE  
Small-outline  
Small-outline taped  
and reeled  
PART # SUFFIX  
MDXXAG  
MD23AA  
D
DR  
device symbol  
Plastic DIP  
P
Single-in-line  
SL  
●
UL Recognized, E132482  
description  
These low voltage dual symmetrical transient  
voltage suppressor devices are designed to  
protect ISDN applications against transients  
caused by lightning strikes and a.c. power lines.  
Offered in two voltage variants to meet battery  
and protection requirements they are guaranteed  
to suppress and withstand the listed international  
lightning surges in both polarities. Transients are  
initially clipped by breakdown clamping until the  
voltage rises to the breakover level, which  
causes the device to crowbar. The high crowbar  
holding current prevents d.c. latchup as the  
current subsides.  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
ensure precise and matched breakover control  
and are virtually transparent to the system in  
normal operation  
Copyright © 1997 Texas Instruments Incorporated  
PRODUCTION DATA information is current as of  
publication date. Products conform to specifications  
per the terms of Texas Instruments standard warranty.  
Production processing does not necessarily include  
testing of all parameters.  
Designed and manufactured by Power  
Innovations, Bedford, UK. under  
private label for Texas Instruments.  
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