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TISP2180F3D PDF预览

TISP2180F3D

更新时间: 2024-02-10 09:31:06
品牌 Logo 应用领域
伯恩斯 - BOURNS 光电二极管
页数 文件大小 规格书
18页 602K
描述
Silicon Surge Protector, 180V V(BO) Max, 4A, PLASTIC, SO-8

TISP2180F3D 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.75Is Samacsys:N
其他特性:UL RECOGNIZED最大转折电压:180 V
配置:DELTA CONNECTED, 3 ELEMENTS最大断态直流电压:145 V
JESD-30 代码:R-PDSO-G8通态非重复峰值电流:4 A
元件数量:3端子数量:8
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

TISP2180F3D 数据手册

 浏览型号TISP2180F3D的Datasheet PDF文件第2页浏览型号TISP2180F3D的Datasheet PDF文件第3页浏览型号TISP2180F3D的Datasheet PDF文件第4页浏览型号TISP2180F3D的Datasheet PDF文件第5页浏览型号TISP2180F3D的Datasheet PDF文件第6页浏览型号TISP2180F3D的Datasheet PDF文件第7页 
TISP2125F3, TISP2150F3, TISP2180F3  
DUAL SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
Copyright © 1997, Power Innovations Limited, UK  
MARCH 1994 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
D PACKAGE  
(TOP VIEW)  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
Low Voltage Overshoot under Surge  
1
2
3
4
8
7
6
5
G
G
G
G
T
NC  
NC  
R
VDRM V(BO)  
DEVICE  
V
V
‘2125F3  
‘2150F3  
‘2180F3  
100  
120  
145  
125  
150  
180  
MDXXAE  
NC - No internal connection  
P PACKAGE  
(TOP VIEW)  
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
T
1
2
8
7
T
Rated for International Surge Wave Shapes  
G
G
ITSP  
WAVE SHAPE  
STANDARD  
3
4
G
R
6
5
G
R
A
175  
120  
60  
2/10 µs  
8/20 µs  
FCC Part 68  
ANSI C62.41  
FCC Part 68  
FCC Part 68  
RLM 88  
MDXXAF  
Specified T terminal ratings require connection of pins 1 and 8.  
Specified R terminal ratings require connection of pins 4 and 5.  
10/160 µs  
10/560 µs  
0.5/700 µs  
45  
38  
SL PACKAGE  
(TOP VIEW)  
FTZ R12  
50  
10/700 µs  
VDE 0433  
50  
CCITT IX K17/K20  
REA PE-60  
50  
1
2
3
T
G
R
10/1000 µs  
35  
Surface Mount and Through-Hole Options  
MDXXAG  
MD23AA  
PACKAGE  
Small-outline  
Small-outline taped  
and reeled  
PART # SUFFIX  
D
device symbol  
DR  
T
R
Plastic DIP  
P
Single-in-line  
SL  
UL Recognized, E132482  
description  
These medium voltage dual symmetrical  
transient voltage suppressor devices are  
designed to protect ISDN and telecommunication  
applications with battery backed ringing against  
transients caused by lightning strikes and a.c.  
power lines. Offered in three voltage variants to  
meet battery and protection requirements they  
are guaranteed to suppress and withstand the  
listed international lightning surges in both  
polarities. Transients are initially clipped by  
breakdown clamping until the voltage rises to the  
breakover level, which causes the device to  
SD2XAA  
G
Terminals T, R and G correspond to the  
alternative line designators of A, B and C  
crowbar. The high crowbar holding current  
prevents d.c. latchup as the current subsides.  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
ensure precise and matched breakover control  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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