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TISP2082F3SL

更新时间： 2024-02-02 02:15:04
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
17页 579K
描述
Silicon Surge Protector, 82V V(BO) Max, 6A, PLASTIC, SIP-3

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中文翻译

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TISP2082F3SL 技术参数

生命周期：Transferred包装说明：IN-LINE, R-PSIP-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.74JESD-30 代码：R-PSIP-T3
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
触发设备类型：SILICON SURGE PROTECTORBase Number Matches：1

TISP2082F3SL 数据手册

 浏览型号TISP2082F3SL的Datasheet PDF文件第2页浏览型号TISP2082F3SL的Datasheet PDF文件第3页浏览型号TISP2082F3SL的Datasheet PDF文件第4页浏览型号TISP2082F3SL的Datasheet PDF文件第5页浏览型号TISP2082F3SL的Datasheet PDF文件第6页浏览型号TISP2082F3SL的Datasheet PDF文件第7页 
TISP2072F3, TISP2082F3  
DUAL SYMMETRICAL TRANSIENT  
VOLTAGE SUPPRESSORS  
Copyright © 1997, Power Innovations Limited, UK  
MARCH 1994 - REVISED SEPTEMBER 1997  
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION  
●
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
D PACKAGE  
(TOP VIEW)  
Low Voltage Overshoot under Surge  
1
2
3
4
8
7
6
5
G
G
G
G
T
NC  
NC  
R
VDRM V(BO)  
DEVICE  
V
V
‘2072F3  
‘2082F3  
58  
66  
72  
82  
MDXXAE  
NC - No internal connection  
●
●
Planar Passivated Junctions  
Low Off-State Current < 10 µA  
P PACKAGE  
(TOP VIEW)  
Rated for International Surge Wave Shapes  
T
1
2
8
7
T
ITSP  
G
G
WAVE SHAPE  
STANDARD  
A
3
4
G
R
6
5
G
R
2/10 µs  
8/20 µs  
FCC Part 68  
ANSI C62.41  
FCC Part 68  
FCC Part 68  
RLM 88  
80  
70  
60  
45  
38  
50  
50  
50  
35  
MDXXAF  
10/160 µs  
10/560 µs  
0.5/700 µs  
Specified T terminal ratings require connection of pins 1 and 8.  
Specified R terminal ratings require connection of pins 4 and 5.  
FTZ R12  
SL PACKAGE  
(TOP VIEW)  
10/700 µs  
VDE 0433  
CCITT IX K17/K20  
REA PE-60  
10/1000 µs  
1
2
3
T
G
R
●
Surface Mount and Through-Hole Options  
PACKAGE  
Small-outline  
Small-outline taped  
and reeled  
PART # SUFFIX  
D
MDXXAG  
MD23AA  
DR  
device symbol  
Plastic DIP  
P
T
R
Single-in-line  
SL  
●
UL Recognized, E132482  
description  
These low voltage dual symmetrical transient  
voltage suppressor devices are designed to  
protect ISDN applications against transients  
caused by lightning strikes and a.c. power lines.  
Offered in two voltage variants to meet battery  
and protection requirements they are guaranteed  
to suppress and withstand the listed international  
lightning surges in both polarities. Transients are  
initially clipped by breakdown clamping until the  
voltage rises to the breakover level, which  
causes the device to crowbar. The high crowbar  
holding current prevents d.c. latchup as the  
current subsides.  
SD2XAA  
G
Terminals T, R and G correspond to the  
alternative line designators of A, B and C  
These monolithic protection devices are  
fabricated in ion-implanted planar structures to  
ensure precise and matched breakover control  
and are virtually transparent to the system in  
normal operation  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
1234567...17

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