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TIP100

更新时间: 2024-01-02 14:19:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体电阻器晶体管局域网
页数 文件大小 规格书
4页 54K
描述
Monolithic Construction With Built In Base- Emitter Shunt Resistors

TIP100 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):1000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:80 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

TIP100 数据手册

 浏览型号TIP100的Datasheet PDF文件第2页浏览型号TIP100的Datasheet PDF文件第3页浏览型号TIP100的Datasheet PDF文件第4页 
TIP100/101/102  
Monolithic Construction With Built In Base-  
Emitter Shunt Resistors  
High DC Current Gain : h =1000 @ V =4V, I =3A (Min.)  
Collector-Emitter Sustaining Voltage  
Low Collector-Emitter Saturation Voltage  
Industrial Use  
Complementary to TIP105/106/107  
FE CE C  
TO-220  
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : TIP100  
60  
80  
100  
V
V
V
CBO  
CEO  
EBO  
: TIP101  
:TIP102  
B
Collector-Emitter Voltage : TIP100  
60  
80  
100  
V
V
V
: TIP101  
: TIP102  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
5
V
A
R1  
R2  
I
I
I
8
C
E
R1 10 k  
R2 0.6 k Ω  
15  
A
CP  
B
1
A
P
Collector Dissipation (T =25°C)  
2
80  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: TIP100  
: TIP101  
: TIP102  
I
= 30mA, I = 0  
60  
80  
100  
V
V
V
C
B
I
Collector Cut-off Current  
: TIP100  
CEO  
V
V
V
= 30V, I = 0  
50  
50  
50  
µA  
µA  
µA  
CE  
CE  
CE  
B
: TIP101  
: TIP102  
= 40V, I = 0  
B
= 50V, I = 0  
B
I
Collector Cut-off Current  
: TIP100  
CBO  
V
V
V
= 60V, I = 0  
50  
50  
50  
µA  
µA  
µA  
CE  
CE  
CE  
E
: TIP101  
: TIP102  
= 80V, I = 0  
E
= 100V, I = 0  
E
I
Emitter Cut-off Current  
DC Current Gain  
V
= 5V, I = 0  
2
mA  
EBO  
EB  
C
h
V
V
= 4V, I = 3A  
1000  
200  
20000  
FE  
CE  
BE  
CE  
CE  
C
= 4V, I = 8A  
C
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
I
I
= 3A, I = 6mA  
2
2.5  
V
V
C
C
B
= 8A, I = 80mA  
B
V
Base-Emitter ON Voltage  
Output Capacitance  
V
= 4V, I = 8A  
2.8  
V
CE  
CB  
C
C
V
= 10V, I = 0, f = 0.1MHz  
200  
pF  
ob  
E
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

TIP100 替代型号

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