Datasheet > TIP100_08

TIP100_08

更新时间： 2024-01-23 17:47:45

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管
页数	文件大小	规格书
5页	551K
描述
NPN Epitaxial Silicon Darlington Transistor

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TIP100_08 数据手册

October 2008

TIP100/TIP101/TIP102

NPN Epitaxial Silicon Darlington Transistor

•

Monolithic Construction With Built In Base-Emitter Shunt Resistors

High DC Current Gain : h_FE=1000 @ V_CE=4V, I_C=3A (Min.)

Collector-Emitter Sustaining Voltage

Low Collector-Emitter Saturation Voltage

Industrial Use

Complementary to TIP105/106/107

Equivalent Circuit

TO-220

1.Base 2.Collector 3.Emitter

R1 @ 10kW

R2 @ 0.6kW

Absolute Maximum Ratings*

T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

V_CBO

Collector-Base Voltage : TIP100

: TIP101

100

: TIP102

V_CEO

Collector-Emitter Voltage : TIP100

100

: TIP101

: TIP102

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

P_C

Collector Dissipation (T_a=25°C)

Collector Dissipation (T_C=25°C)

Junction Temperature

°C

T_J

150

T_STG

Storage Temperature

- 65 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

TIP100/TIP101/TIP102 Rev. 1.0.0

www.fairchildsemi.com

12 3 4 5

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